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Deposition and etching behaviour of boron trichloride gas at silicon surface

Muroi Mitsuko Yamada Ayami Saito Ayumi Habuka Hitoshi 40323927 横浜国立大学

2020.01

概要

The deposition and etching at a silicon surface by boron trichloride gas were overviewed in a wide temperature range using a chemical vapour deposition reactor. At temperatures lower than 800 °C, while the silicon surface was covered with boron, the formed film thickness was ignorable. At 900 °C, the boron deposition rate increased to 0.25 μm min^(−1). In the temperature range between 900 and 1000 °C, the boron film formation was considerable. In contrast, at 1100 °C, the silicon surface was etched at 0.36 μm min^(−1). At temperatures higher than 1050 °C, while etching occurred along with producing chlorosilanes, the silicon surface after the etching was still covered with boron. Boron deposition and silicon etching might simultaneously occur at high temperatures by the boron trichloride gas. By adjusting the surface temperature to 800 °C, boron and silicon co-deposition was possible using the gas mixture of dichlorosilane and boron trichloride.

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Figure captions

Figure 1 (a) Horizontal cold wall reactor and (b) process used in this study.

Figure 2 Wafer thickness change rate due to deposition and etching caused by boron trichloride

gas on silicon surface at various temperatures.

Figure 3 Quadrupole mass spectra of exhaust gas during boron film deposition at 1000 oC.

Figure 4 Quadrupole mass spectra of exhaust gas during silicon etching at 1100 oC.

Figure 5 QCM frequency change versus time after introducing boron trichloride gas at 1100 oC.

Figure 6 QCM frequency shift immediately after introducing boron trichloride gas at various

temperatures.

Figure 7 Chemical condition of (a) boron 1s orbital and (b) silicon 2p orbital after exposed to

boron trichloride gas at 800 oC.

Figure 8 Chemical condition of boron 1s orbital after exposed to boron trichloride gas at 1100

Figure 9 Chemical condition of boron 1s orbital after exposed to boron trichloride gas and

dichlorosilane gas at 800 oC.

Figure 10 Chemical condition of silicon 2p orbital after exposed to boron trichloride gas and

dichlorosilane gas at 800 oC.

Figure 11 Schematic of chemical reactions of boron trichloride and dichlorosilane at silicon

surface.

Halogen lamps

BCl3

Inlet

Quartz chamber

Sample

QCM Exhaust

SiH2Cl2

QMS

Temp. (oC)

(a)

H2 1 atm, 1 slm

1150 oC

Surface

cleaning

BCl3

SiH2Cl2

800-1100 oC

Time

(b)

Fig. 1

Deposition

0.2

-0.2

Etching

Change rate (µm min-1)

0.4

H2: 400 sccm

BCl3: 100 sccm

20 min

-0.4

600

800

1000

Substrate temperature (oC)

Fig. 2

0.01

Cl +

B+

BCl3 +

BCl2 +

H2: 400 sccm

BCl3: 100 sccm

1000℃, 20 min

BCl +

Normalized partial pressure Pi/PH2

1 2

100

Mass (a.m.u.)

150

200

Fig. 3

Cl +

0.01

100

Mass (a.m.u.)

SiCl4 +

SiCl3 +

BCl3 +

SiCl +

B+

BCl +

0.1

SiCl2 +

H2+

H2: 400 sccm

BCl3: 100 sccm

1100℃, 20 min

BCl2 +

Normalized partial pressure Pi/PH2

150

200

Fig. 4

Frequency (Hz)

Density & Viscosity

-100000

QCM

H2: 400 sccm

BCl3: 100 sccm

-200000 1100℃

400

800

Time (s)

1200

Fig. 5

Density & Viscosity

Deposition

Frequency shift (Hz)

-20000

-40000

600

QCM

Immediately after

BCl3 introduction

800

1000

Temperature (oC)

1200

Fig. 6

H2: 400 sccm, BCl3: 100 sccm, 800 ℃, 20 min

(b) Si 2p

Counts(-)

(a) B 1s

SiO2

Si-Si

190

185 105

100

Binding energy(eV)

Fig. 7

Counts(-)

XPS B1s

H2: 400 sccm

BCl3: 100 sccm

1100 oC

195

193

191

189

Binding energy(eV)

187

Fig. 8

Counts (-)

195

XPS B1s

H2: 1000 sccm

SiH2Cl2: 20 sccm

BCl3: 100 sccm

800℃

193

191

189

Binding energy (eV)

187

Fig. 9

Counts (-)

XPS Si2p

H2: 1000 sccm

SiH2Cl2: 20 sccm

BCl3: 100 sccm

800℃

Si-Si

SiO2

105

103

101

Binding energy(eV)

Fig.

Exhaust

BCl3

SiH2Cl2

HCl

SiCl2

HCl

SiCl3

SiCl

SiCl2

SiHCl3

SiCl4

(SiCl2)n

QCM

Fig. 11

...

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Deposition and etching behaviour of boron trichloride gas at silicon surface

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Deposition and etching behaviour of boron trichloride gas at silicon surface

概要

関連論文

Fabrication of nanostructured Ti thin film with Ti deposition in He plasmas

Preparation of anatase TiO2 nanowalls using carbon nanowall templating for photoelectrochemical water splitting

AlOx Based Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer in the Field-Effect Transistors

Exploration into novel properties of ultra-high concentration hydrogen doped rutile-TiO₂

Effect of Thermal Annealing of Atomic-Layer-Deposited AlOx/ Chemical Tunnel Oxide Stack Layer at the PEDOT : PSS/n-type Si Interface to Improve its Junction Quality

参考文献