Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

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Table I.

Mg concentration

(cm−3)

2.8 × 1019

𝑁𝑁A

(cm−3)

3.4 × 1019

𝑁𝑁D

(cm−3)

3.0 × 1018

𝐸𝐸A0

(meV)

232 ± 15

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Figure Captions

Table 1. Acceptor concentration, donor concentration, and ionization energy

obtained by Hall-effect measurement of p-type GaN with Mg concentration of 2.8

× 1019 cm−3.

Fig. 1. Schematic of the HVPE system for the growth of Mg-doped GaN films

using MgO.

Fig. 2. (a) SIMS depth profile of Mg concentration for Mg-doped GaN films with various

HCl flow rates in the MgO zone and (b) Mg, H, and O concentrations as a function of HCl

flow rate.

Fig. 3. Nomarski-type microscopy images of samples with various Mg concentrations.

Fig. 4. Room-temperature PL spectra of UID-GaN film and Mg-doped GaN films with

various Mg concentrations.

Fig. 5. Temperature dependence of (a) hole concentration and (b) hole mobility of the sample

with Mg concentration of 2.8 × 1019 cm−3.

10

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Source zone

Growth zone

Exhaust

NH3, H2, N2

HCl, N2

MgO

Sub.

HCl, N2

Ga melt

NH3, H2, N2

Fig. 1.

11

Holder

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(a)

(b)

Fig. 2.

12

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Mg concentration

(cm−3)

1.5 × 1019

4.4 × 1019

Nomarski-type

microscopy image

100 µm

Fig. 3.

13

6.8 × 1019

9.0 × 1019

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Fig.4.

14

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(a)

(b)

Fig. 5.

15

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