[1] Critical raw materials in lighting applications: Substitution opportunities and implication on their demand, C C Pavel, phys status solidi (a), 2016, 213, 11.
[2] Rare Earth Element Geochemistry, P Henderson, Elsevier, ISBN 04444421483.
[3] Rare Earth Elements: What and Where They Are, V Zepf, a Chapter in Rare Earth Elements, Springer, ISBN 9783642354588, 11-39.
[4] Chemistry of the rare-earth elements, N E Topp, J Chem Educ, 1966, 43, 2, A160.
[5] Introduction to Solid State Physics, C Kittel, Wiley, 8th edition ISBN 047141526X.
[6] Inorganic Chemistry, C E Housecroft and A Sharpe, Pearson Edu Lim, ISBN 9781292134161.
[7] The Lanthanide Contraction, B E Douglas, J Chem Educ, 1954, 31, 11, 598.
[8] Lanthanide contraction and magnetism in the heavy rare earth elements, I D Hughes, M Dane, A Ernst, W Hergert, M Luders, J Poulter, J B Staunton, A Svane, Z Szotek and W M Temmerman, Nature Lett, 2007, 446, 650-653.
[9] Quantum Mechanics, A S Davydov, Elsevier, ISBN 978080204383.
[10] New Regularities In The Spectra Of The Alkaline Earth, H N Russell and F A Saunders, Astrophys J, 1925, 61 38-68.
[11] Recent developments in rare-earth doped materials for optoelectronics, A J Kenyon, Prog Quantum Electron, 2002, 26, 4-5, 225–84.
[12] Rare Earth Materials: Properties and Applications, A R Jha, Routledge, ISBN 1138033871.
[13] Science of Rare Earths, G Adachi, Kagakudojin, IBSN 475980806X.
[14] Luminescent Materials, G Blasse and B C Grabmaier, Springer, IBSN 0387580190.
[15] Rare-Earth Doped III-Nitrides for Optoelecrtronic and Spintronic Applications, K O’Donnell, K Peter and D Volkmar, Springer, ISBN 9789048128761.
[16] 50th annivesary of the Judd-Ofelt theory: An expeimentalist’s view of the formal- ism and its application, M P Hehlen, M G Brik and K W Kramer J Lumin, 2013, 136, 221-239.
[17] Energy Level Diagrams and Extranuclear Building of the Elements, R N Keller, J Chem Edu, 1962, 39, 6, 289-293.
[18] The intensity of the 173 nm emission of LaFs3:Nd3+ scintillation crystals, P Dorenbos, J T M de Haas and C W E van Eijik, 1996, J Lumin, 69, 229-233.
[19] From Lighting To Photoprotection: Fundamentals and Applications of Rare Earth Materials, P C de S Filho, J F Lima and O A Serra, J Braz Chem Soc, 2015, 26, 12, 2471-2495.
[20] The surface science of titanium dioxide, U Diebold, Surf Sci Rep, 2003, 48, 5-8, 53-229.
[21] Doped-TiO2: A Review, A Zaleska, Recent Pat Eng, 2009, 2, 157-164.
[22] Review on: Titanium Dioxide Applications, A J Haider, Z N Jameel and I H M Al-Hussaini, Energy Procedia, 2019, 157, 17-29.
[23] Electrical properties of nanocrystalline anatase TiO2 thin films with different crystallite size, B Huber, H Graser and C Ziegler, Surf Sci, 2004, 566-568, Part 1, 419-424.
[24] Synthesis and applications of nano-TiO2: a review, M T Noman, M A Ashraf and A Ali, Environ Sci Pollut R, 2019, 26, 3262-3291.
[25] Review on Undoped/Doped TiO2 Nanomaterial; Synthesis and Photocatalytic and Antimicrobial Activity, S Yadav and G Jaisear, J Chin Chem Soc, 2016 64, 103-116.
[26] A mini-review on rare earth metal-doped TiO2 for photocatalytic remediation of waste water, N U Saqib, R Adnan and I Shah, Environ Sci Pollut R, 2016, 23, 15941-15951.
[27] Review of functional titanium oxides. I: TiO2 and its modifications, N Rahimi, R A Pax and E M Gray, Prog Solid State Ch, 2016, 44, 3, 86-105.
[28] Correlation between anatase-to-rutile transformation and grain growth in nanocrystalline titania powders, X Z Ding and X H Liu, J Mater Res, 1998, 13, 9, 2556-2559.
[29] Comparison of the electronic structure of anatase and rutile TiO2 single-crystal surfaces using resonant photoemission and x-ray absorption spectroscopy, A G Thomas, R Stockbauer, S Warren, T K Johal, S Patel, D Holland, A T Ibrahimi and F Wiame, Phys Rev B, 2007, 75, 3, 035105.
[30] Semiconductor Material and Device Characterization, D K Schroder, Wiley, ISBN 0471739065.
[31] Laser Ablation, R E Russo, Appl Spectrosc, 1995, 49, 9, 14A-28A.
[32] Laser ablation inductively coupled plasma mass spectrometry: achievements, problems, prospects, S F Durrant, J Anal At Spectrom, 1999, 14, 1385-1403.
[33] Laser Spectroscopy 1, W Demtroder, Springer, ISBN 9783642538582.
[34] Annealing, W F Hosford, in Iron and Steel, Cambridge University Press, ISBN 076132111X, 51-65.
[35] Recrystallization and Related Annealing Phenomena, F J Humphreys and M Hatherly, Pergamon, ISBN 9780080441641.
[36] Photoluminescence properties of samarium-doped TiO2 semiconductor nanocrys- talline powders, L Hu, H Song, G Pan, B Yan, R Qin, Q Dai, L Fan, S Li and X Bai, J Lumin, 2007, 127, 371-376.
[37] Luminescence properties of sol-gel-derived TiO2:Sm powder, V Kiisk, V Reedo, O Sild and I Sildos, Opt Mater, 2009, 31, 1376-1379.
[38] Luminescence properties of Sm3+-doped TiO2 thin films prepared by laser abla- tion, F Jing, S Harako, S Komuro and X Zhao, J Phys D: Appl Phys, 2009, 42, 085109.
[39] Sensitization effect of Al co-doping on Nd-related photoluminescence in TiO2 matrix, Y Aizawa, T Ohtsuki, S Harako, S Komuro and X Zhao, Jpn J Appl Phys, 2014, 53, 6, 06JG06.
[40] X-ray Characterization of Materials, E Lifshin, Wiley-VCH, 1999, ISBN: 9783527613755.
[41] X-ray Diffraction: Modern Experimental Techniques, O H Seeck and B Murphy, Pan Stanford, ISBN 9789814303590.
[42] Application Of X-ray Diffraction Techniques To Semiconductor Materials Car- acterization, S S Laderman , M Scott, R Smith and A Nel, Proc SPIE, 1985, 0524.
[43] X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, P Klug and L E Alexander, Wiley, New York, 1974, ISBN: 9780471493693.
[44] Photoluminescence and Structural Analysis of Samarium Doped TiO2 Thin Films and Their Applications to Visible LEDs, M Murayama, K Yoda, K Shiraishi, S Guan, S Komuro and X Zhao, OPJ, 2018, 8, 5, 146-164.
[45] Fundamentals of XAFS, M Newville, Rev Mineral Geochem, 2014, 78, 1, 33-74.
[46] Introduction to XAFS, G B Bunker, Cambridge University Press, ISBN 9780521767750.
[47] X-ray absorption fine structure and nanostructure, S W Han, 2006, Int J Nanote- chol, 2006, 33, 3, 396-413.
[48] Some notes on XAFS measurement: hole and thickness effects, Y Takahashi, Jap Magazine of Mineralogical and Petrological Sci, 2016, 45, 93-98.
[49] Optical Measurement Techniques, R Myllyla, R Myllyla and A V Priezzhev, Springer, ISBN 9783540719267.
[50] Optical characterization of semiconductors: infrared, Raman, and photolumines- cence spectroscopy, S Perkowits, Elsevier, ISBN 9780080984278.
[51] Silicon photonic materials obtained by ion implantation and rapid thermal pro- cessing, I F Crowe, PhD Thesis to the University of Manchester, 2010.
[52] Radiative and non-radiative transitions of excited Ti3+ cations in sapphire, A Shirakov, Z Burshtein, Y Shimony, E Frumker and A A Ishaaya, Sci Rep, 2019, 9, 18810.
[53] SEM microcharacteraization of semiconductors, D B Holt et al, Elsevier, ISBN 9780123538550.
[54] ATHENA, ARTEMIS, HEPHAESTUS: data analysis for X-ray absorption spec- troscopy using FEFF, B Ravel et al, 2005, J Synchrotron Rad 12, 537-541.
[55] Metal-Semiconductor Contacts, E H Rhoderick, Elsevier, ISBN 0198593368.
[56] Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction, A D Bartolomeo, Phys Rep, 2016, 606, 1-58.
[57] Tuning the electronic band alignment properties of TiO2 nanotubes by boron doping, S S Surah, M Vishwakarma, R Kumar, R Nain, S Sirohi and G Kumar, Results Phys, 2019, 12, 1725-1731.
[58] Preparation of Ruthenium Metal and Ruthenium Oxide Thin Films by a Low- Temperature Solution Process, Y Murakami, P T Tue, H Tsukada, J Li and T Shimoda, JAIST Repository, Conference paper for Green Device Research Center, 2013, http://hdl.handle.net/10119/12159.
[59] CRC Handbook of Chemistry and Physics, D R Lide, J Am Soc, 2008, 130, 1, 382.
[60] Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments, C T Sah, L Forbes, L L Rosier and A F Tasch Jr, Sol-Stat Electron, 1970, 13, 759-788.
[61] Tutorial: Junction spectroscopy techniques and deep-level defects in semicon- ductors, A R Peaker, V P Markevish and J Coutinho, J Appl Phys, 2018, 123, 161559.
[62] Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material, M V Contreras, PhD Thesis to the University of Manchester, 2018.
[63] DLTS Study of Recombination Active Defects In Sokar Silicon, J Mullins, PhD Thesis to the University of Manchester, 2018.
[64] Electrical and Optical Defect Evaluation Technique for Electronic and Solar Grade Silicon, A R Peaker and V P Markevich, In Defects and Impurities in Silicon Materials, Springer, 2015, IBSN 9784431558002.
[65] Study on atomic coordination around Er doped into anatase- and rutile TiO2: Er-O clustering dependent on the host crystal phase, M Ishii, S Komuro and T Morikawa, J Appl Phys, 2003, 94, 3823.
[66] Atomic-scale distortion of optically activated Sm dopants identified with site- selective X-ray absorption spectroscopy, M Ishii, I F Crowe, M P Halsall, B Hamilton, Y Hu, T K Sham, S Harako, X Zhao and S Komuro, J Appl Phys, 2013, 114, 133505.
[67] Photoluminescence Enhancement and Change in the Second Nearest Neighbor Distance of Sm-Doped TiO2 Thin Films, M Murayama, K Yoda, K Shiraishi, I F Crowe, S Komuro and X Zhao, Phys Status Solidi B, 2019, 1800522.
[68] Review of the Anatase to Rutile Phase Transition, D A H Hanaor and C Sorrell, J Mater Sci, 2011, 45, 4, 855-874.
[69] Theoretical prediction of local distortion in an ErO3 cluster: Stabilization of a C4v structure by a rack and ponion effect, M Ishii and Y Komukai, App Phys Lett, 2001, 79, 7.
[70] Effect of Bi3+ ions on luminescence properties of ZnWO4:Eu3+, Sm3+, Bi3+ nanorods, M Zhao, D Liu, S Ma and K Wang, J Mater Sci, 2018, 53, 11512- 11523.
[71] Effect of silver ions on nthe energy transfer from host defects to Tb ions in sol-gel silica glass, A E Abbass, H C Swart and R E Kroon, J Lumin, 2004, 160, 22-26.
[72] Electron-spin-echo envelope-modulation study of distance between Nd3+ ions and Al3+ ions in the co-doped SiO2 glasses, K Arari, S Yamasaki, J Isoya and H Namikawa, J Non-Cryst Solids, 1996, 196, 216-220.
[73] Dissolution of rare-earth clusters in SiO2 by Al codoping: A microscopic model, J Laegsgaard, Phys Rev B, 2002, 65, 174114.
[74] Reabsorption cross section of Nd3+-doped quasi-three-level lasers, F Chen, J Sun, R Yan and X Yu, 2019, Sci Rep, 9, 5620.
[75] Effect of Al co-doping on the luminescence properties of Nd3+-doped TiO2 thin films, M Murayama, K Yoda, S Komuro, I F Crowe and X Zhao, J Lumin, 2019, 216, 116656.
[76] Influence of Al on the local structure of Nd-doped TiO2 thin films: A combined luminescence and X-ray absorption fine structure analysis, M Murayama, K Yoda, S Komuro, H Nitani, I F Crowe and X Zhao, Mater Sci & Eng B, 2019, 246, 49-52.
[77] Time response of 1.54 µm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation, S Komuro, T Katsumata, T Morikawa, X Zhao, H Isshiki and Y Aoyagi, Appl Phys Lett, 1995, 74, 377.
[78] 1.54 µm emission dynamics of erbium-doped zinc-oxide thin films, S Komuro, T Katsumata, T Morikawa, X Zhao, H Isshiki and Y Aoyagi, Appl Phys Lett, 2000, 76, 3935.
[79] Fabrication of highly conductive Ti1−xNbxO2 polycrystalline films on glass sub- strates via crystallization of amorphous phase grown by pulsed laser deposition, T Hitosugi, A Ueda, S Nakao, N Yamada, Y Furubayashi, Y Hirose, T Shimada and T Hasegawa, Appl Phys Lett, 2007, 90, 212106.
[80] A transparent metal: Nb-doped anatase TiO2, Y Furubayashi, T Hitosugi, Y Yamamoto, K Inaba, G Kinoda, Y Hirose, T Shimada and T Hasegawa, Appl Phys Lett, 2005, 86, 252101.
[81] Doping and compensation in Nb-doped anatase and rutile TiO2, H-Y Lee and J Robertson, J Appl Phys, 2013, 113, 213706.
[82] Color chart for thin SiC films grown on Si substrates, L Wang, S Dimitrijev, G Walker, J Han, A Iacopi, P Tanner, L Hold, Y Zha and F Iacopi, Mater Sci Forum, 2013, 740-742, 279-282.
[83] The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films, S Asalzadeh and K Yasserian, Semiconductors, 2019, 53, 12, 1603-1607.
[84] Deep Level Transient Spectroscopy Analysis of an Anatase Epitaxial Film Grown by Metal Organic Chemical Vapor Deposition, T Miyagi, T Ogawa, M Kamei, Y Wada, T Mitsuhashi, A Yamazaki, E Ohta and T Sato, Jpn J Appl Phys, 2001, 40, 4B, L404-L406.
[85] Pt/GaN Schottky diodes for hydrogen gas sensors, M Ali, V Camalla, V Lebedev, H Romanus, V Tilak, D Merfield, P Sandvik and O Ambacher, Sens Actuat, 2006, 113, 2, 797-804.
[86] First-Principles study of rectifying properties of Pt/TiO2 interface, T Tamura, S Ishibashi, K Terakura and H Weng, Phys Rev B, 2009, 80, 195302.
[87] Deep-level transient spectroscopy at platinum/titanium-dioxide hydrogen sensors, L Schnorr, M Cerchez, D Ostermann and T Heinzel, Phys Status Solidi B, 2016, 253, 4, 690-696.
[88] Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction, S Komuro, T Katsumata, H Kokai, T Morikawa and X Zhao, Appl Phy Lett, 2002, 81, 25, 4733.