Impact of high-temperature implantation of Mg ions into GaN

1) A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T.

Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S.

Ishibashi, Phys. Status Solidi B 255, 1700521 (2018).

2) S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi,

T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono, Jpn. J. Appl. Phys. 58,

SC0802 (2019).

3) C. G. Van de Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004).

4) A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H.

Naramoto, and S. Ishibashi, Phys. Status Solidi B 252, 2794 (2015).

5) A. Wenzel, C. Liu, and B. Rauschenbach, Mater. Sci. Eng. B 59, 191 (1999).

6) S. Whelan, M. J. Kelly, R. Gwilliam, C. Jeynes, and C. Bongiorno, J. Appl. Phys.

98, 013515 (2005).

7) A. Lardeau-Falcy, M. Coig, M. Charles, C. Licitra, J. Kanyandekwe, F. Milési, J.

Eymery, and F. Mazen, ECS Trans. 80, 131 (2017).

8) T. Niwa, T. Fujii, and T. Oka, Appl. Phys. Express 10, 091002 (2017).

9) A. Kumar, K. Mitsuishi, T. Hara, K. Kimoto, Y. Irokawa, T. Nabatame, S.

Takashima, K. Ueno, M. Edo, and Y. Koide, Nanoscale Res. Lett. 13, 403 (2018).

10) M. Sumiya, K. Fukuda, S. Takashima, S. Ueda, T. Onuma, T. Yamaguchi, T.

Honda, A. Uedono, Journal of Crystal Growth 511, 15 (2019).

11) I. O. Usov, N. R. Parikh, D. Thomson, and R. F. Davis, Mater. Res. Soc. Symp.

Proc. 693, I11.12 (2001).

12) T. Oikawa, Y. Saijo, S. Kato, T. Mishima, and T. Nakamura, Nucl. Instrum.

Methods Phys. Res., Sect. B 365, 168 (2015).

13) J. D. Greenlee, T. J. Anderson, B. N. Feigelson, K. D. Hobart, and F. J. Kub, Phys.

Status Solidi A 212, 2772 (2015).

14) T. Narita, T. Kachi, K. Kataoka, and T. Uesugi, Appl. Phys. Express 10, 016501

(2017).

15) R. Tanaka, S. Takashima, K. Ueno, H. Matsuyama, M. Edo, and K. Nakagawa,

Appl. Phys. Express 12, 054001 (2019).

16) M. Yoshino, K. Sugamata, K. Ikeda, T. Nishimura, K. Kuriyama, and T.

13

Template for JJAP Regular Papers (Jan. 2014)

Nakamura, Nucl. Instrum. Methods Phys. Res., Sect. B 449, 49 (2019).

17) M. Yoshino, Y. Ando, M. Deki, T. Toyabe, K. Kuriyama,Y. Honda, T. Nishimura,

H. Amano, T. Kachi, and T. Nakamura, Materials 12, 689 (2019).

18) R. Tanaka, S. Takashima, K. Ueno, H. Matsuyama, and M. Edo, Jpn. J. Appl.

Phys. 59, SGGD02 (2020).

19) H. Sakurai, M. Omori, S. Yamada, Y. Furukawa, H. Suzuki, T. Narita, K. Kataoka,

M. Horita, M. Bockowski, J. Suda, and T. Kachi, Appl. Phys. Lett. 115, 142104

(2019).

20) M. Sumiya, K. Fukuda, H. Iwai, T. Yamaguchi, T. Onuma, and T. Honda, AIP

Adv. 8, 115225 (2018).

21) S. M. C. Miranda, P. Kessler, J. G. Correia, R. Vianden, K. Johnston, E. Alves, and

K. Lorenz, Phys. Status Solidi C 9, 1060 (2012).

22) S. M. C. Miranda, P. R. Edwards, K. P. O’Donnell, M. Boćkowski, E. Alves, I. S.

Roqan, A. Vantomme, and K. Lorenz, Phys. Status Solidi C 11, 253 (2014).

23) M. A. Reshchikov, D. O. Demchenko, J. D. McNamara, S. Fernández-Garrido,

and R. Calarco, Phys. Rev. B 90, 035207 (2014).

24) K. Kojima, S. Takashima, A. Edo, K. Ueno, M. Shimizu, T. Takahashi, S.

Ishibashi, A. Uedono, and S. F. Chichibu, Appl. Phys. Express 10, 061002 (2017).

25) K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F.

Chichibu, Appl. Phys. Lett. 113, 191901 (2018).

26) A. G. Jacobs, B. N. Feigelson, J. K. Hite, C. A. Gorsak, L. E. Luna, T. J.

Anderson, and F. J. Kub, Jpn. J. Appl. Phys. 58, SCCD07 (2019).

27) S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S.

Ishibashi, and A. Uedono, Appl. Phys. Lett. 112, 211901 (2018).

28) A. Kumar, J. Uzuhashi, T. Ohkubo, R. Tanaka, S. Takashima, M. Edo, and K.

Hono, J. Appl. Phys. 126, 235704 (2019).

29) H. Fukushima, S. Usami, M. Ogura, Y. Ando, A. Tanaka, M. Deki, M. Kushimoto,

S. Nitta, Y. Honda, and H. Amano, Jpn. J. Appl. Phys. 58, SCCD25 (2019).

30) T. Nakamura, M. Yoshino, H. Tsuge, K. Ikeda, and K. Kuriyama, Surface &

Coatings Technology 355, 7 (2018).

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Figure Captions

Fig. 1. Illustration of simple process flow and Mg-ion-implanted (Mg-I/I) GaN sample

structure.

Fig. 2. [Mg] profile obtained by SRIM calculation.

Fig. 3. XRD spectra in 2θ−ω scan mode of Mg-implanted GaN samples (as-implanted) and

unimplanted UID-GaN.

Fig. 4. PL spectra at 77 K for (a) Mg-implanted GaN at RT (as-implanted), (b) Mg-implanted

GaN at 800 °C (as-implanted), and (c) Mg-implanted GaN at 1000 °C (as-implanted).

Fig. 5. Cross-sectional TEM images of (a) Mg-implanted GaN at RT (as-implanted), (b) Mgimplanted GaN at 800 °C (as-implanted), and (c) Mg-implanted GaN at 1000 °C (asimplanted).

Fig. 6. PL spectra at 77 K for (a) Mg-implanted GaN at RT (after annealing), (b) Mgimplanted GaN at 800 °C (after annealing), and (c) Mg-implanted GaN at 1000 °C (after

annealing). (d) is spectra of NBE and DAP emission regions of (a)−(c) showing the PL

intensity axis on a linear scale.

Fig. 7. Cross-sectional TEM images of (a) Mg-implanted GaN at RT (after annealing), (b)

Mg-implanted GaN at 800 °C (after annealing), and (c) Mg-implanted GaN at 1000 °C (after

annealing).

Fig. 8. I−V characteristics of vertical diodes fabricated using (a) Mg-implanted GaN at RT

(after annealing), (b) Mg-implanted GaN at 800 °C (after annealing), and (c) Mg-implanted

GaN at 1000 °C (after annealing). The upper row is a semi-log scale and the lower row is a

linear scale.

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Template for JJAP Regular Papers (Jan. 2014)

Mg

Ni/Au

SiN

Mg-I/I layer

UID-GaN

(MOVPE)

5 μm

SiN

Mg-I/I layer

n-GaN sub.

UID-GaN

UID-GaN

n-GaN sub.

n-GaN sub.

Heating

SiN

Mg-I/I layer

SiN

Al

① Mg ion

implantation

② Post-implantation

annealing

③ Fabrication of

vertical diodes

Fig. 1.

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-3

Mg concentration (cm )

20

10

19

10

100 keV

40 keV

Total

18

10

17

10

16

10

SiN GaN

50 100 150 200 250 300

Depth (nm)

Fig. 2.

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Intensity (counts)

10

104

RT implantation (as-implanted)

800℃ implantation (as-implanted)

1000℃ implantation (as-implanted)

Unimplanted UID-GaN

Occurrence of

lattice expansion

GaN

(0002)

10

10

10

10

34.1 34.2 34.3 34.4 34.5 34.6 34.7

2Theta (deg)

Fig. 3.

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PL intensity (arb.unit)

10

10

(a) RT implantation

(as-implanted)

(b) 800℃ implantation

(as-implanted)

(c) 1000℃ implantation

(as-implanted)

DAP

10

GL

DAP

NBE

GL

GL

10

10

1.5

2.0

2.5

3.0

3.5

1.5

2.0

2.5

3.0

3.5

Photon energy (eV)

Fig. 4.

19

1.5

2.0

2.5

3.0

3.5

Template for JJAP Regular Papers (Jan. 2014)

50 nm

(a) RT implantation

(as-implanted)

50 nm

50 nm

(b) 800℃ implantation

(as-implanted)

Fig. 5.

20

(c) 1000℃ implantation

(as-implanted)

Template for JJAP Regular Papers (Jan. 2014)

NBE

GL

DAP

(b) 800℃ implantation

(after annealing) DAP

NBE

GL

(c) 1000℃ implantation

(after annealing)

DAP

NBE

GL

1x10

8x102

10

6x10

Linear scale

(d)

DAP DAP

-LO

1000℃

800℃

NBE

PL intensity (arb. unit)

10

1.2x10

(a) RT implantation

(after annealing)

NBE-LO

10

4x10

10

2x10

10

1.5

2.0

2.5

3.0

3.5

1.5

2.0

2.5

3.0

3.5

Photon energy (eV)

Fig. 6.

21

1.5

2.0

2.5

3.0

3.5

RT

3.0 3.1 3.2 3.3 3.4 3.5

Template for JJAP Regular Papers (Jan. 2014)

50 nm

(a) RT implantation

(after annealing)

50 nm

(a) RT implantation

(as-implanted)

50 nm

50 nm

(b) 800℃ implantation

(after annealing)

50 nm

(c) 1000℃ implantation

(after annealing)

50 nm

(b) 800℃ implantation

(as-implanted)

Fig. 7.

22

(c) 1000℃ implantation

(as-implanted)

Template for JJAP Regular Papers (Jan. 2014)

10-2

-4

Current (A)

10

(a) RT implantation

(after annealing)

(b) 800℃ implantation

(after annealing)

(c) 1000℃ implantation

(after annealing)

-6

10

10-8

-10

10

-12

10

Semi-log scale

10-14

Semi-log scale

Semi-log scale

-4

1x10

-5

Current (A)

8x10

-5

6x10

-5

4x10

-5

2x10

-5

-2x10

-10

-5

Linear scale

10 -10

-5

Linear scale

10 -10

Voltage (V)

Fig. 8.

23

-5

Linear scale

10

...