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Figure captions
Figure 1 Chemical vapor deposition reactor having the QCM sensor as a real-time monitoring
system. (a) the reactor and (b) the QCM box.
Figure 2 Silicon epitaxial growth consisting of two separated processes, i.e., wafer surface
cleaning and silicon epitaxial growth.
Figure 3 QCM frequency behavior influenced by gas ambient and deposition on surface.
Figure 4 Quartz crystal microbalance frequency behavior measured when the 10 % SiH2Cl2 gas
arrived at the QCM box set at the inlet.
Figure 5 Quartz crystal microbalance frequency behavior measured at the exhaust of the reactor
during silicon epitaxial film deposition using SiHCl3 and SiH2Cl2.
Figure 6 Gas motions at the MWave values of (a) 8.7, (b) 15.3 and (c) 28.7.
Figure 7 Contour diagram of gas phase temperature at the MWave values of (a) 8.7, (b) 15.3 and
(c) 28.7.
Figure 8 Schematic of gas flow in vertical cold wall reactor.
(I) Heavy gas mixture and (II)
light gas mixture. Hatched region: chlorosilane gas position. (a), (b), (c) and (d):
chlorosilane gas advance, and (e): QCM frequency behaviour.
16
H2
SiH2Cl2
SiHCl3
QCM Box
Quartz tube
Inlet
QCM
(b) QCM Box (RT)
Wafer
(a) Reactor
Computer
Controller
Exhaust
QCM Box
Figure 1
Epitaxial growth
RT
Remove SiO2
Temperature
H2
SiH2Cl2
SiHCl3
C D
Time
Figure 2
Gas ambient
H2
SiH2Cl2, SiHCl3
1.3
∆f ∝ (ρ µ ) (gas)
Mix
Mix
Time
Figure 3
Frequency change (Hz)
20
SiH2Cl2 arrival
at inlet QCM
-20
-40
50
Time (s)
100
Figure 4
Total 100-106 sccm, 0.7 µm/min
SiH2Cl2 10%
-500
-1000
-1500
SiH2Cl2 20%
Arriving at QCM
Frequency change ∆f (Hz)
Byproduct deposition
SiHCl3 20%
100
200
Time, t (s)
300
Figure 5
Inlet
Inlet
Inlet
0.4
0.3
0.2
Wafer
(b) 15.3
SiH2Cl2 20 %: 21.8
Wafer
(a) 8.7
SiH2Cl2 10 %: 11.9
0.1
Wafer
(c) 28.7
(SiHCl3 20%)
Figure 6
Velocity (m/s)
1000 oC, 4 rpm, Vz=0.004 m/s
1000 oC, 4 rpm, Vz=0.004 m/s
Inlet
Inlet
1000
Wafer
(b) 15.3
SiH2Cl2 20 %: 21.8
Wafer
(a) 8.7
SiH2Cl2 10 %: 11.9
800
600
400
200
27
Wafer
(c) 28.7
(SiHCl3 20%)
Figure 7
Temperature (oC)
Inlet
(I)
Time
(a)
(b)
(c)
(d)
(e)
(II)
Time
(a)
(b)
(c)
(d)
(e)
Figure
...
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