リケラボ論文検索は、全国の大学リポジトリにある学位論文・教授論文を一括検索できる論文検索サービスです。

リケラボ 全国の大学リポジトリにある学位論文・教授論文を一括検索するならリケラボ論文検索大学・研究所にある論文を検索できる

リケラボ 全国の大学リポジトリにある学位論文・教授論文を一括検索するならリケラボ論文検索大学・研究所にある論文を検索できる

大学・研究所にある論文を検索できる 「High-Performance Normally Normally-off 2DHG Diamond MOSFET for High Voltage Switching Application」の論文概要。リケラボ論文検索は、全国の大学リポジトリにある学位論文・教授論文を一括検索できる論文検索サービスです。
リケラボ

コピーが完了しました

URLをコピーしました

論文の公開元へ論文の公開元へ
書き出し

High-Performance Normally Normally-off 2DHG Diamond MOSFET for High Voltage Switching Application

Bi Te 早稲田大学

2021.08.03

概要

Since the beginning of the 20th century, the development of semiconductor technology has been at par with the development of modern science and technology. Semiconductors are used in various fields of modern science and technology, such as aerospace, supercomputers, and power conversion systems. Wide bandgap (WBG) semiconductors (SiC, GaN, etc.) have been widely studied and applied as second-generation semiconductors because of their excellent physical properties and capability to exceed the theoretical limit of Si. In addition, semiconductor materials with bandgap significantly wider than 3.4 electron volts (eV) called ultra-WBG semiconductors (UWBG) are also being widely studied. The physical properties of these UWBG semiconductor materials (such as diamond, Ga2O3, AIN) exceed the theoretical limit of Si, and they have higher dielectric strength and better thermal conductivity, which reduce the power loss caused by switching of semiconductor power devices in high-voltage and high-frequency environments.

Chapter 1. This chapter begins with an overview of WBG semiconductor materials and their applications in power devices. The SiC high-voltage power devices and GaN-based high electron mobility transistor (HEMT) n-type devices and their circuit applications are also introduced in this chapter. However, these materials are very difficult to be utilized as p-type devices. Diamond, owing to its unique physical and electrical properties and a bandgap of 5.5 eV, has become the most promising new generation semiconductor material for p-type power devices, as compared to SiC and GaN. The diamond surface exhibits negative electron affinity (NEA) by hydrogen-termination. Thus, the C–H diamond surface is an NEA of about 1.3 eV; hence, diamonds with hydrogen-terminated bonds exhibit unique surface conductivity. Energy band bending caused by negative charge adsorption on the C-H suface induce two-dimensional hole gas (2DHG) under the diamond surface, and the C–H diamond exhibits very high p-type conductivity.

The C–H diamond metal oxide semiconductor field effect transistor (MOSFET) is achieved with the C–H diamond surface being utilized as a surface conductive channel, which can induce the 2DHG in the bulk diamond and facilitate the formation of the p-type channel. However, the surface conducting layer is affected by the temperature of the environment; therefore, a passivating layer is needed to stabilize the adsorbates and surface C–H bonds, which is important for the temperature stability of the 2DHG. A C–H diamond MOSFET is fabricated with a high-temperature (450 °C) using an atomic layer deposition (ALD) Al2O3 passivating film and H2O as an oxidizing agent. As a result, the C–H diamond MOSFET becomes capable of operating in a wide range of temperatures and has a high breakdown voltage. Because of the low interface states density (<1012 eV-1 cm-2) of the C–H diamond and the independent crystallographic orientations of the 2DHG, a high drain current density vertical-type diamond MOSFET can be manufactured with the help of a diamond RF power device, which has high power density and low ON resistance.

However, the C–H diamond MOSFETs operates in the normally ON state due to the spontaneous polarization effect of the C–H dipoles, and the existence of a fixed negative charge in the alumina insulating film intensifies this polarization, and the hole normally induced on the C–H diamond surface. A normally-off diamond power device has become a key topic for research in the diamond-based devices field. The 2DHG diamond achieves a normally-off operation through surface modification, thus destroying or reducing the C–H surface and adjusting and controlling the quantity and type of fixed charge in the insulating film.

In summary, achieving high-performance, normally-off 2DHG diamond MOSFETs is very important for diamond devices that operate as high-performance power devices in electric power conversion systems having semiconductor integrated circuits, such as a high voltage complementary switching circuit.

Chapter 2 In this chapter, a high drain current C–H diamond MOSFET is fabricated by increasing the gate width (WG) of the MOSFETs. In the experiment, lateral-type C–H diamond MOSFETs with WG ranging from 25 μm to 500 μm and vertical-type C–H diamond MOSFETs with WG ranging from 0.125 mm to 10 mm were fabricated. In the fabrication process of the lateral-type C–H diamond MOSFETs, the Ti/Pt/Au required for the source/drain electrode was formed on an n-doped (100) diamond substrate with an undoped homoepitaxial growth diamond layer. The C–H channel and TiC were formed under high temperature conditions and in an atmosphere of hydrogen and hydrogen plasma, respectively. A 200-nm (ALD) Al2O3 passivating film was formed, and the process of MOSFET fabrication was completed after the Al gate deposition.

To further expand the gate width WG of diamond MOSFETs, vertical-type MOSFETs with multi-trench structures were fabricated on IIb (100) p+ diamond substrates. A nitrogen-doped layer was constructed through the MVPCVD to prevent leakage of current, and multiple trench structures were etched on the substrate of the vertical channel source electrode (Au/Pt/Ti: 20/30/200 nm). Consequently, a multi-finger structure was formed around the trench. After the hydrogen termination and annealing, a 200 nm Al2O3 layer was formed on the top, and a Ti/Au drain electrode (10/250 nm) was formed on the backside of the p+ diamond substrate. Finally, a 100-nm Al film was used to fabricate the overlapped-gate electrode.

As a result, it was observed that the maximum value of IDS for lateral-type C–H diamond MOSFETs is −50 mA with WG = 500 μm, while for vertical-type C–H diamond MOSFETs, the maximum value of IDS is −185 mA with WG = 5 mm. The maximum output current of the diamond MOSFET is enhanced by increasing the gate width.

Chapter 3 In Chapter 2, the fabrication process and characteristic analysis of high-current diamond MOSFETs are described. However, all MOSFETs usually operate in the normally-on condition. We use the cascode structure to shift the threshold voltage VTH of the diamond MOSFET to normally-off. The diamond cascode was fabricated by combining a normally OFF silicon p-MOSFET with low breakdown voltage and a normally-on C–H diamond MOSFET with high breakdown voltage.

The diamond cascode is composed of lateral- and vertical-type C–H diamond MOSFETs having an enlarged gate width achieved during the normally-off operation. The VGD–IDS characteristic shows that the threshold voltage of the diamond cascode is normally-off at VTH = −1 V, and the breakdown voltage of the diamond cascode combined with the lateral-type C–H diamond MOSFET with LGD = 25 μm reaches −1735 V when VGS = 0 V (a true normally-off voltage blocking condition). In this study, the gate of the diamond MOSFET is effectively controlled by the silicon p-MOSFET, which causes the diamond p-channel cascode to exhibit a normally-off operation and breakdown performance.

The diamond cascode is utilized in the upper branch of a half-bridge inverter as a p-channel normally-off power device, while a normally-off GaN n-FET by cascode circuit is utilized in the lower branch. The gate driver inverter is based on a push-pull circuit, which consists of a Si n-MOSFET (upper branch) and a Si p-MOSFET (lower branch) to drive the diamond–GaN half-bridge inverter in high operation voltage. Both the half-bridge inverter and the gate driver inverter are under the same drain power voltage (VDD). The output voltage of the gate driver inverter is fed to the diamond–GaN half-bridge inverter as the input gate voltage through resistors connected in series with the drains.

The results show that the diamond–GaN half-bridge complementary inverter at 1000 Hz under high-voltage conditions (200 and 150 V) is realized using a two-stage circuit structure. The switching speed became faster after utilizing the diamond MOSFETs with larger gate widths (fabricated in Chapter 2). TON = 1.4 μs obtained with WG = 5 mm for the vertical-type diamond MOSFET in the upper branch is approximately 4 times faster compared to that obtained with WG = 500 μm for lateral-type diamond MOSFET.

In Chapter 4, a new comcept to fabricate a high-performance normally-off diamond MOSFET is presented by utilizing the C–Si-bonded diamond surface formation as a two-dimensional layer channel for p-type diamond MOSFETs. The C–Si bonded diamond surface is formed at a high temperature in a reducing gas atmosphere on the SiO2/diamond interface during boron doping diamond selective growth through SiO2 masking. Above 3 monolayers, C–Si bonding on the diamond surface is confirmed through X-ray photoelectron spectroscopy at the C1s and Si2p core levels from 290 eV–271 eV and 107 eV–95 eV, respectively. In addition, secondary ion mass spectroscopy results suggest that it is not the C–H bonds, but the C–Si bonds at the interface, which are mainly responsible for the FET operation. 2DHG C–Si diamond MOSFETs are fabricated using the C–Si diamond surface as a p-channel. MOSFETs with LSD in the range of 6–12 μm exhibit appreciable field-effect mobility (140 cm2V-1s-1 at LSD =12 μm and 300 K) and normally-off operation at the same time. The wide temperature characteristics of the C–Si MOSFET were confirmed. The performance of the MOSFET is enhanced as the temperature increases, owing to the boron-doped selectively grown diamond in the source and drain electrodes, and the device shows great stability with a high on/off ratio of 106, which is maintained at 673 K. The C-–Si MOSFET shows excellent temperature stability and a normally-off operation.

Finally, a C-Si diamond MOSFET with a thinner SiO2 insulating film and without the Al2O3 film was fabricated and tested. These devices show high mobility with the normally-off operation, and the high-speed complementary switching circuit is realized by combining the normally-off C–Si diamond p-MOSFET and the normally OFF Si-n MOSFET.

Chapter 5 is the summary of this doctoral thesis, where we mainly discuss the manufacturing method and working mechanism of the high-performance normally-off 2DHG diamond MOSFET. Diamond MOSFETs show great potential for application in electronic circuits and power conversion systems.

論文の公開元へ

この論文で使われている画像

関連論文

関連論文をもっと見る

参考文献

Chapter1

[1] M. N. Yoder, “Wide bandgap semiconductor materials and devices,” IEEE Trans. Electron Devices, vol. 43, no. 10, pp. 1633–1636, 1996, doi: 10.1109/16.536807.

[2] R. J. Trew, “SiC and GaN transistors - Is there one winner for microwave power applications?,” Proc. IEEE, vol. 90, no. 6, pp. 1032–1047, 2002, doi: 10.1109/JPROC.2002.1021568.

[3] R. Siemieniec, U. Kirchner, and A.- Villach, “The 1200V Direct-Driven SiC JFET power switch Keywords Device and Driver Concept Overview on active SiC power device concepts,” Proc. 2011 14th Eur. Conf. Power Electron. Appl., pp. 1–10, 2011.

[4] B. Wrzecionko, D. Bortis, J. Biela, and J. W. Kolar, “Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs,” IEEE Trans. Power Electron., vol. 27, no. 7, pp. 3452–3463, 2012, doi: 10.1109/TPEL.2011.2182209.

[5] R. K. Malhan et al., “Normally-off trench JFET technology in 4H silicon carbide,” Microelectron. Eng., vol. 83, no. 1 SPEC. ISS., pp. 107–111, 2006, doi: 10.1016/j.mee.2005.10.035.

[6] J. Biela, D. Aggeler, D. Bortis, and J. W. Kolar, “Balancing circuit for a 5- kV/50-ns pulsed-power switch based on SiC-JFET super cascode,” IEEE Trans. Plasma Sci., vol. 40, no. 10 PART 1, pp. 2554–2560, 2012, doi: 10.1109/TPS.2011.2169090.

[7] P. Friedrichs, H. Mitlehner, R. Schörner, K. O. Dohnke, R. Elpelt, and D. Stephani, “Stacked high voltage switch based on SiC VJFETs,” IEEE Int. Symp. Power Semicond. Devices ICs, pp. 139–142, 2003, doi: 10.1109/ispsd.2003.1225249.

[8] K. Acharya, S. K. Mazumder, and P. Jedraszczak, “Efficient, high-temperature bidirectional Dc/Dc converter for plug-in-Hybrid electric vehicle (PHEV) using SiC devices,” Conf. Proc. - IEEE Appl. Power Electron. Conf. Expo. - APEC, vol. 60607, pp. 642–648, 2009, doi: 10.1109/APEC.2009.4802727.

[9] R. A. Wood, D. P. Urciuoli, T. E. Salem, and R. Green, “Reverse conduction of a 100 a SiC DMOSFET module in high-power applications,” Conf. Proc. - IEEE Appl. Power Electron. Conf. Expo. - APEC, pp. 1568–1571, 2010, doi: 10.1109/APEC.2010.5433440.

[10] R. Lai, F. Wang, R. Burgos, D. Boroyevich, D. Zhang, and P. Ning, “A shoot- through protection scheme for converters built with SiC JFETs,” IEEE Trans. Ind. Appl., vol. 46, no. 6, pp. 2495–2500, 2010, doi: 10.1109/TIA.2010.2070785.

[11] T. Friedli, S. D. Round, D. Hassler, and J. W. Kolar, “Design and performance of a 200-kHz All-SiC JFET current DC-link back-to-back converter,” IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1868–1878, 2009, doi: 10.1109/TIA.2009.2027538.

[12] M. A. Khan et al., “Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 2 II, pp. 624–633, 2003, doi: 10.1109/TMTT.2002.807681.

[13] U. K. Mishra, P. Parikh, and Y. F. Wu, “AlGaN/GaN HEMTs - An overview of device operation and applications,” Proc. IEEE, vol. 90, no. 6, pp. 1022–1031, 2002, doi: 10.1109/JPROC.2002.1021567.

[14] H. Marchand et al., “Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors,” J. Appl. Phys., vol. 89, no. 12, pp. 7846–7851, 2001, doi: 10.1063/1.1372160.

[15] S. T. Sheppard et al., “High-Power Microwave GaN / AlGaN HEMT ’ s on Semi-Insulating Silicon Carbide Substrates,” vol. 20, no. 4, pp. 161–163, 1999.

[16] T. R. Lenka and A. K. Panda, “Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT,” Semiconductors, vol. 45, no. 5, pp. 650–656, 2011, doi: 10.1134/S1063782611050198.

[17] O. Ambacher et al., “Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 87, no. 1, pp. 334–344, 2000, doi: 10.1063/1.371866.

[18] M. Shur, B. Gelmont, and M. A. Khan, “Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN,” J. Electron. Mater., vol. 25, no. 5, pp. 777–785, 1996, doi: 10.1007/BF02666636.

[19] O. Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222–3233, 1999, doi: 10.1063/1.369664.

[20] J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors,” Appl. Phys. Lett., vol. 250, no. June 2000, pp. 10–13, 2000.

[21] M. Asif Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, “Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor,” Appl. Phys. Lett., vol. 65, no. 9, pp. 1121–1123, 1994, doi: 10.1063/1.112116.

[22] X. Huang, Z. Liu, Q. Li, and F. C. Lee, “Evaluation and application of 600 v GaN HEMT in cascode structure,” IEEE Trans. Power Electron., vol. 29, no. 5,pp. 2453–2461, 2014, doi: 10.1109/TPEL.2013.2276127.

[23] B. V. Derjaguin, D. V. Fedoseev, V. M. Lukyanovich, B. V. Spitzin, V. A. Ryabov, and A. V. Lavrentyev, “Filamentary diamond crystals,” J. Cryst.Growth, vol. 2, no. 6, pp. 380–384, 1968, doi: 10.1016/0022-0248(68)90033- X.

[24] F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 64, no. 16, pp. 1–7, 2001, doi: 10.1103/PhysRevB.64.165411.

[25] K. Hirama, H. Takayanagi, S. Yamauchi, J. H. Yang, H. Kawarada, and H. Umezawa, “Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance,” Appl. Phys. Lett., vol. 92, no. 11, 2008, doi: 10.1063/1.2889947.

[26] K. Hirama et al., “Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator,” Appl. Phys. Lett., vol. 88, no. 11, 2006, doi: 10.1063/1.2186072.

[27] K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, “Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements,” Appl. Phys. Lett., vol. 68, no. 3, pp. 376–378, 1996, doi: 10.1063/1.116690.

[28] H. Kawarada, “Hydrogen-terminated diamond surfaces and interfaces,” Surf. Sci. Rep., vol. 26, no. 7, pp. 205–206, 1996, doi: 10.1016/S0167-5729(97)80002-7.

[29] C. E. Nebel et al., “Hydrogen-induced transport properties of holes in diamond surface layers,” Appl. Phys. Lett., vol. 79, no. 27, pp. 4541–4543, 2001, doi: 10.1063/1.1429756.

[30] H. Kawarada, M. Aoki, and M. Ito, “Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds,” Appl. Phys. Lett., vol. 65, no. 12, pp. 1563–1565, 1994, doi: 10.1063/1.112915.

[31] M. Itoh and H. Kawarada, “Fabrication and characterization of metal- semiconductor field-effect transistor utilizing diamond surface-conductive layer,” Jpn. J. Appl. Phys., vol. 34, no. 9R, pp. 4677–4681, 1995, doi: 10.1143/JJAP.34.4677.

[32] B. A. Fox et al., “Diamond devices and electrical properties,” Diam. Relat. Mater., vol. 4, no. 5–6, pp. 622–627, 1995, doi: 10.1016/0925-9635(94)05245- X.

[33] A. Vescan; P. Gluche; W. Ebert; E.Kohn, “High-Temperature , High-Voltage Operation,” IEEE Electron Device Lett., vol. 18, no. 5, pp. 222–224, 1997.

[34] K. Ueda and M. Kasu, “High temperature operation of Boron-implanted diamond field-effect transistors,” Jpn. J. Appl. Phys., vol. 49, no. 4 PART 2, 2010, doi: 10.1143/JJAP.49.04DF16.

[35] H. Ishizaka, M. Tachiki, K. S. Song, H. Umezawa, and H. Kawarada, “Cryogenic operation of surface-channel diamond field-effect transistors,” Diam. Relat. Mater., vol. 12, no. 10–11, pp. 1800–1803, 2003, doi: 10.1016/S0925-9635(03)00208-5.

[36] A. Daicho, T. Saito, S. Kurihara, A. Hiraiwa, and H. Kawarada, “High- reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3,” J. Appl. Phys., vol. 115, no. 22, 2014, doi: 10.1063/1.4881524.

[37] A. Hiraiwa, A. Daicho, S. Kurihara, Y. Yokoyama, and H. Kawarada, “Refractory two-dimensional hole gas on hydrogenated diamond surface,” J. Appl. Phys., vol. 112, no. 12, 2012, doi: 10.1063/1.4769404.

[38] K. Matsunaga, T. Tanaka, T. Yamamoto, and Y. Ikuhara, “First-principles calculations of intrinsic defects in Al2O3,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 68, no. 8, pp. 1–9, 2003, doi: 10.1103/PhysRevB.68.085110.

[39] H. Kawarada et al., “C-H surface diamond field effect transistors for high temperature (400 °c) and high voltage (500V) operation,” Appl. Phys. Lett., vol. 105, no. 1, pp. 1–5, 2014, doi: 10.1063/1.4884828.

[40] H. Kawarada et al., “Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage,” Proc. Int. Symp. Power Semicond. Devices ICs, vol. 2016-July, pp. 483–486, 2016, doi: 10.1109/ISPSD.2016.7520883.

[41] H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, and A. Hiraiwa, “Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application,” Tech. Dig. - Int. Electron Devices Meet. IEDM, vol. 2015-Febru, no. February, pp. 11.2.1-11.2.4, 2015, doi: 10.1109/IEDM.2014.7047030.

[42] H. Umezawa et al., “RF diamond transistors: Current status and future prospects,” Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap., vol. 44, no. 11, pp. 7789–7794, 2005, doi: 10.1143/JJAP.44.7789.

[43] T. Matsumoto et al., “Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics,” Sci. Rep., vol. 6, no. July, pp. 1–6, 2016, doi: 10.1038/srep31585.

[44] Y. Kitabayashi et al., “Normally-Off C-H Diamond MOSFETs with Partial C- O Channel Achieving 2-kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 38, no. 3, pp. 363–366, 2017, doi: 10.1109/LED.2017.2661340.

[45] Y. F. Wang et al., “Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al,” Diam. Relat. Mater., vol. 81, no. December 2017, pp. 113–117, 2018, doi: 10.1016/j.diamond.2017.11.016.

[46] J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, “Normally-off HfO2-gated diamond field effect transistors,” Appl. Phys. Lett., vol. 103, no. 9, pp. 1–5, 2013, doi: 10.1063/1.4820143.

[47] W. Fei, T. Bi, M. Iwataki, S. Imanishi, and H. Kawarada, “ Oxidized Si terminated diamond and its MOSFET operation with SiO 2 gate insulator ,” Appl. Phys. Lett., vol. 116, no. 21, p. 212103, 2020, doi: 10.1063/1.5143982.

[48] H. Kawarada et al., “Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications,” Sci. Rep.,vol. 7, no. August 2016, pp. 1–8, 2017, doi: 10.1038/srep42368.

[49] H. Kawarada, “High-current metal oxide semiconductor field-effect transistors on h-terminated diamond surfaces and their high-frequency operation,” Jpn. J. Appl. Phys., vol. 51, no. 9, 2012, doi: 10.1143/JJAP.51.090111.

[50] K. Hirama, H. Takayana, S. Yamauchi, Y. Jingu, and H. Umezawa, “High- performance p-channel diamond MOSFETs with alumina gate insulator,” IEEE Int. Electron Devices Meet., no. 3, pp. 873–876, 2007.

[51] S. Imanishi et al., “3.8 W/mm RF Power Density for ALD Al2O3-Based Two- Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity,” IEEE Electron Device Lett., vol. 40, no. 2, pp. 279–282, 2019, doi: 10.1109/LED.2018.2886596.

[52] M. Inaba et al., “Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate,” Appl. Phys. Lett., vol. 109, no. 3, 2016, doi: 10.1063/1.4958889.

[53] N. Oi et al., “Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors,” Sci. Rep., vol. 8, no. 1, pp. 2–8, 2018, doi: 10.1038/s41598-018-28837-5.

[54] M. Iwataki, N. Oi, K. Horikawa, S. Amano, J. Nishimura, T. Kageura, M. Inaba, A. Hiraiwa,H. Kawarada “Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET,” IEEE Electron Device Lett.,vol. 41, no. 1, pp. 111–114, 2020.

[55] M. A. Pinault, J. Barjon, T. Kociniewski, F. Jomard, and J. Chevallier, “The n- type doping of diamond: Present status and pending questions,” Phys. B Condens. Matter, vol. 401–402, pp. 51–56, 2007, doi: 10.1016/j.physb.2007.08.112.

[56] C. M. Ferreira and S. Serpa, “Society 5.0 and Social Development,” Preprints, vol. 3–4, no. November, pp. 1–6, 2018, doi: 10.20944/preprints201811.0108.v1.

[57] IRENA and CPI (2020), Global Landscape of Renewable Energy Finance, 2020,. 2020.

[58] Y. Shiroishi, K. Uchiyama, and N. Suzuki, “Society 5.0: For Human Security and Well-Being,” Computer (Long. Beach. Calif)., vol. 51, no. 7, pp. 91–95, 2018, doi: 10.1109/MC.2018.3011041.

Chapter2

[1] A. Daicho, T. Saito, S. Kurihara, A. Hiraiwa, and H. Kawarada, “High- reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3,” J. Appl. Phys., vol. 115, no. 22, 2014, doi: 10.1063/1.4881524.

[2] H. Kawarada et al., “C-H surface diamond field effect transistors for high temperature (400 °c) and high voltage (500V) operation,” Appl. Phys. Lett., vol. 105, no. 1, pp. 1–5, 2014, doi: 10.1063/1.4884828.

[3] N. Oi et al., “Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation,” IEEE Electron Device Lett., vol. 40, no. 6, pp. 933–936, 2019, doi: 10.1109/LED.2019.2912211.

[4] N. Oi et al., “Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors,” Sci. Rep., vol. 8, no. 1, pp. 2–8, 2018, doi: 10.1038/s41598-018-28837-5.

Chapter3

[1] H. Kawarada, “Hydrogen-terminated diamond surfaces and interfaces,” Surface Science Reports, vol. 26, no. 7. pp. 205–206, 1996, doi: 10.1016/S0167-5729(97)80002-7.

[2] M. Inaba et al., “Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate,” Appl. Phys. Lett., vol. 109, no. 3, 2016, doi: 10.1063/1.4958889.

[3] N. Oi et al., “Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors,” Sci. Rep., vol. 8, no. 1, pp. 2–8, 2018, doi: 10.1038/s41598-018-28837-5.

[4] H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, and A. Hiraiwa, “Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application,” Tech. Dig. - Int. Electron Devices Meet. IEDM, vol. 2015-Febru, no. February, pp. 11.2.1-11.2.4, 2015, doi: 10.1109/IEDM.2014.7047030.

[5] W. Fei, T. Bi, M. Iwataki, S. Imanishi, and H. Kawarada, “ Oxidized Si terminated diamond and its MOSFET operation with SiO 2 gate insulator ,” Appl. Phys. Lett., vol. 116, no. 21, p. 212103, 2020, doi: 10.1063/1.5143982.

[6] H. Shang et al., “Electrical characterization of germanium p-channel MOSFETs,” IEEE Electron Device Lett., vol. 24, no. 4, pp. 242–244, 2003, doi: 10.1109/LED.2003.810879.

[7] J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams, and L. C. Feldman, “Scaling between channel mobility and interface state density in SiC MOSFETs,” IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3808–3811, 2011, doi: 10.1109/TED.2011.2164800.

[8] Z. Zheng et al., “Enhancement-Mode GaN p-Channel MOSFETs for Power Integration,” Proc. Int. Symp. Power Semicond. Devices ICs, vol. 2020-Septe,pp. 525–528, 2020, doi: 10.1109/ISPSD46842.2020.9170081.

[9] J. Y. Jiang, J. Q. Hung, P. W. Huang, T. L. Wu, and C. F. Huang, “Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs,” Jpn. J. Appl. Phys., vol. 59, no. SG, 2020, doi: 10.7567/1347-4065/ab656d.

[10] D. Okamoto, H. Yano, T. Hatayama, and T. Fuyuki, “Removal of near- interface traps at SiO2/4H-SiC (0001) interfaces by phosphorus incorporation,” Appl. Phys. Lett., vol. 96, no. 20, 2010, doi: 10.1063/1.3432404.

[11] J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, “Normally-off HfO2-gated diamond field effect transistors,” Appl. Phys. Lett., vol. 103, no. 9, pp. 1–5, 2013, doi: 10.1063/1.4820143.

[12] T. Matsumoto et al., “Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics,” Sci. Rep., vol. 6, no. July, pp. 1–6, 2016, doi: 10.1038/srep31585.

[13] Y. F. Wang et al., “Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al,” Diam. Relat. Mater., vol. 81, no. December 2017, pp. 113–117, 2018, doi: 10.1016/j.diamond.2017.11.016.

[14] Y. Kitabayashi et al., “Normally-Off C-H Diamond MOSFETs with Partial C- O Channel Achieving 2-kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 38, no. 3, pp. 363–366, 2017, doi: 10.1109/LED.2017.2661340.

[15] N. Oi et al., “Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation,” IEEE Electron Device Lett., vol. 40, no. 6, pp. 933–936, 2019, doi: 10.1109/LED.2019.2912211.

[16] X. Huang, Z. Liu, Q. Li, and F. C. Lee, “Evaluation and application of 600 v GaN HEMT in cascode structure,” IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2453–2461, 2014, doi: 10.1109/TPEL.2013.2276127.

[17] X. Huang, Z. Liu, F. C. Lee, and Q. Li, “Characterization and enhancement of high-voltage cascode GaN devices,” IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 270–277, 2015, doi: 10.1109/TED.2014.2358534.

[18] W. Saito et al., “Switching controllability of high voltage GaN-HEMTs and the cascode connection,” Proc. Int. Symp. Power Semicond. Devices ICs, no. June,pp. 229–232, 2012, doi: 10.1109/ISPSD.2012.6229065.

[19] H. Y. Wu et al., “GaN cascode performance optimization for high efficient power applications,” Proc. Int. Symp. Power Semicond. Devices ICs, vol. 2016- July, pp. 255–258, 2016, doi: 10.1109/ISPSD.2016.7520826.

[20] H. Kawarada et al., “Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage,” Proc. Int. Symp. Power Semicond. Devices ICs, vol. 2016-July, pp. 483–486, 2016, doi: 10.1109/ISPSD.2016.7520883.

[21] K. Okuda, T. Isobe, H. Tadano, and N. Iwamuro, “A dead-time minimized inverter by using complementary topology and its experimental evaluation of harmonics reduction,” 2016 18th Eur. Conf. Power Electron. Appl. EPE 2016 ECCE Eur., 2016, doi: 10.1109/EPE.2016.7695673.

Chapter4

[1] H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, and A. Hiraiwa, “Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application,” Tech. Dig. - Int. Electron Devices Meet. IEDM, vol. 2015-Febru, no. February, pp. 11.2.1-11.2.4, 2015, doi: 10.1109/IEDM.2014.7047030.

[2] J. W. Liu et al., “Interfacial band configuration and electrical properties of LaAlO 3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors,” J. Appl. Phys., vol. 114, no. 8, 2013, doi: 10.1063/1.4819108.

[3] Z. Ren et al., “Polycrystalline Diamond MOSFET with MoO3 Gate Dielectric and Passivation Layer,” IEEE Electron Device Lett., vol. 38, no. 9, pp. 1302– 1304, 2017, doi: 10.1109/LED.2017.2727879.

[4] Y. Kitabayashi et al., “Normally-Off C-H Diamond MOSFETs with Partial C- O Channel Achieving 2-kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 38, no. 3, pp. 363–366, 2017, doi: 10.1109/LED.2017.2661340.

[5] M. W. Geis, B. B. Pate, and J. A. Gregory, “Capacitance-Voltage Measurements on Metal-SiO2 Diamond Structures Fabricated with (100)- and (1 l l)-Oriented Substrates,” IEEE Trans. Electron Devices, vol. 38, no. 3, pp. 619–626, 1991, doi: 10.1109/16.75174.

[6] A. Schenk et al., “Formation of a silicon terminated (100) diamond surface,”Appl. Phys. Lett., vol. 106, no. 19, 2015, doi: 10.1063/1.4921181.

[7] M. Stutzmann, J. A. Garrido, M. Eickhoff, and M. S. Brandt, “Direct biofunctionalization of semiconductors: A survey,” Phys. Status Solidi Appl. Mater. Sci., vol. 203, no. 14, pp. 3424–3437, 2006, doi: 10.1002/pssa.200622512.

[8] N. Oi et al., “Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation,” IEEE Electron Device Lett., vol. 40, no. 6, pp. 933–936, 2019, doi: 10.1109/LED.2019.2912211.

[9] K. Fujino, Y. Nishimoto, N. Tokumasu, and K. Maeda, “Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone,” J. Electrochem. Soc., vol. 137, no. 9, pp. 2883–2887, 1990, doi: 10.1149/1.2087093.

[10] A. Kawano et al., “Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition,” Phys. Rev. B - Condens. Matter Mater. Phys., vol. 82, no. 8, pp. 1–5, 2010, doi: 10.1103/PhysRevB.82.085318.

[11] W. Fei et al., “Point-Arc Remote Plasma Chemical Vapor Deposition for High- Quality Single-Crystal Diamond Selective Growth,” Phys. Status Solidi Appl. Mater. Sci., vol. 216, no. 21, pp. 1–6, 2019,

参考文献をもっと見る

全国の大学の
卒論・修論・学位論文
を
一発検索！

この論文の関連論文を見る