[1] B. Morgan, C.M. Waits, J. Krizmanic, R. Ghodssi, Development of a deep silicon phasefresnel lens using gray-scale lithography and deep reactive ion etching, J. Microelectromechanical Syst. 13 (2004) 113–120.
[2] J. Albero, L. Nieradko, C. Gorecki, H. Ottevaere, V. Gomez, H. Thienpont, J. Pietarinen, B. Päivänranta, N. Passilly, Fabrication of spherical microlenses by a combination of isotropic wet etching of silicon and molding techniques, Opt. Express. 17 (2009) 6283.
[3] M. Mukaida, J. Yan, Fabrication of hexagonal microlens arrays on single-crystal silicon using the tool-servo driven segment turning method, Micromachines. 8 (2017).
[4] M. Mukaida, J. Yan, Ductile machining of single-crystal silicon for microlens arrays by ultraprecision diamond turning using a slow tool servo, Int. J. Mach. Tools Manuf. 115 (2017) 2–14.
[5] L. Minkevičius, S. Indrišiūnas, R. Šniaukas, B. Voisiat, V. Janonis, V. Tamošiūnas, I. Kašalynas, G. Račiukaitis, G. Valušis, Terahertz multilevel phase Fresnel lenses fabricated by laser patterning of silicon, Opt. Lett. 42 (2017) 1875.
[6] A.R.A. Manaf, T. Sugiyama, J. Yan, Design and fabrication of Si-HDPE hybrid Fresnel lenses for infrared imaging systems, Opt. Express. 25 (2017) 1202.
[7] A.R. Abdul Manaf, J. Yan, Improvement of form accuracy and surface integrity of SiHDPE hybrid micro-lens arrays in press molding, Precis. Eng. 47 (2017) 469–479.
[8] A.R. Abdul Manaf, J. Yan, Press molding of a Si-HDPE hybrid lens substrate and evaluation of its infrared optical properties, Precis. Eng. 43 (2016) 429–438.
[9] P. Zhou, Y. Yan, N. Huang, Z. Wang, R. Kang, D. Guo, Residual Stress Distribution in Silicon Wafers Machined by Rotational Grinding, J. Manuf. Sci. Eng. 139 (2017) 081012.
[10] J. Yan, T. Asami, H. Harada, T. Kuriyagawa, Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining, Precis. Eng. 33 (2009) 378–386.
[11] P. Zhou, S. Xu, Z. Wang, Y. Yan, R. Kang, D. Guo, A load identification method for the grinding damage induced stress (GDIS) distribution in silicon wafers, Int. J. Mach. Tools Manuf. 107 (2016) 1–7.
[12] J. Yan, T. Asami, H. Harada, T. Kuriyagawa, Crystallographic effect on subsurface damage formation in silicon microcutting, CIRP Ann. - Manuf. Technol. 61 (2012) 131–134.
[13] A.M. Kovalchenko, Y. V. Milman, On the cracks self-healing mechanism at ductile mode cutting of silicon, Tribol. Int. 80 (2014) 166–171.
[14] Y. Jingfei, B. Qian, L. Yinnan, Z. Bi, Formation of subsurface cracks in silicon wafers by grinding, Nami Jishu Yu Jingmi Gongcheng/Nanotechnology Precis. Eng. 1 (2018) 172–179.
[15] The International Academy for Production Engineering, L. Laperrière, G. Reinhart, eds., CIRP Encyclopedia of Production Engineering, 1st ed., Springer-Verlag Berlin Heidelberg, 2014.
[16] Z.J. Pei, G.R. Fisher, J. Liu, Grinding of silicon wafers: A review from historical perspectives, Int. J. Mach. Tools Manuf. 48 (2008) 1297–1307.
[17] H. Ohmori, T. Nakagawa, Analysis of Mirror Surface Generation of Hard and Brittle Materials by ELID (Electronic In-Process Dressing) Grinding with Superfine Grain Metallic Bond Wheels, CIRP Ann. - Manuf. Technol. 44 (1995) 287–290.
[18] J. Yan, S. Sakai, H. Isogai, K. Izunome, Recovery of microstructure and surface topography of grinding-damaged silicon wafers by nanosecond-pulsed laser irradiation, Semicond. Sci. Technol. 24 (2009) 105018.
[19] J. Yan, F. Kobayashi, Laser recovery of machining damage under curved silicon surface, CIRP Ann. - Manuf. Technol. 62 (2013) 199–202.
[20] J. Yan, T. Asami, T. Kuriyagawa, Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation, Semicond. Sci. Technol. 22 (2007) 392–395.
[21] P.Y. Chen, M.H. Tsai, W.K. Yeh, M.H. Jing, Y. Chang, Investigation of the relationship between whole-wafer strength and control of its edge engineering, Jpn. J. Appl. Phys. 48 (2009).
[22] P.Y. Chen, M.H. Tsai, W.K. Yeh, M.H. Jing, Y. Chang, Relationship between wafer edge design and its ultimate mechanical strength, Microelectron. Eng. 87 (2010) 2065– 2070.
[23] P.Y. Chen, M.H. Tsai, W.K. Yeh, M.H. Jing, Y. Chang, Relationship between wafer fracture reduction and controlling during the edge manufacturing process, Microelectron. Eng. 87 (2010) 1809–1815.
[24] D. Robert, N. Yoshio, eds., Handbook of Semiconductor Manufacturing Technology, 2nd Editio, Taylor & Francis Group, 2007.
[25] R. Doering, Y. Nishi, eds., Handbook of Semiconductor Manufacturing Technology, Second Edi, CRC Press LLC, 2008.
[26] J. Yan, M. Yoshino, T. Kuriagawa, T. Shirakashi, K. Syoji, R. Komanduri, On the ductile machining of silicon for micro electro-mechanical systems (MEMS), optoelectronic and optical applications, Mater. Sci. Eng. A. 297 (2001) 230–234.
[27] J. Yan, K. Syoji, T. Kuriyagawa, H. Suzuki, Ductile regime turning at large tool feed, J. Mater. Process. Technol. 121 (2002) 363–372.
[28] K. Liu, X.P. Li, M. Rahman, K.S. Neo, X.D. Liu, A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers, Int. J. Adv. Manuf. Technol. 32 (2007) 631–637.
[29] P.N. Blake, R.O. Scattergood, Ductile‐Regime Machining of Germanium and Silicon, J. Am. Ceram. Soc. 73 (1990) 949–957.
[30] R.G. Jasinevicius, J.G. Duduch, L. Montanari, P.S. Pizani, Dependence of brittle-toductile transition on crystallographic direction in diamond turning of single-crystal silicon, Proc. Inst. Mech. Eng. Part B J. Eng. Manuf. 226 (2012) 445–458.
[31] S. Goel, X. Luo, A. Agrawal, R.L. Reuben, Diamond machining of silicon: A review of advances in molecular dynamics simulation, Int. J. Mach. Tools Manuf. 88 (2015) 131–164.
[32] T. Nakasuji, S. Kodera, S. Hara, H. Matsunaga, N. Ikawa, S. Shimada, Diamond Turning of Brittle Materials for Optical Components, CIRP Ann. - Manuf. Technol. 39 (1990) 89–92.
[33] T. Shibata, S. Fujii, E. Makino, M. Ikeda, Ductile-regime turning mechanism of singlecrystal silicon, Precis. Eng. 18 (1996) 129–137.
[34] J. Yan, T. Asami, T. Kuriyagawa, Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy, Precis. Eng. 32 (2008) 186–195.
[35] M.B. Cai, X.P. Li, M. Rahman, Characteristics of “dynamic hard particles” in nanoscale ductile mode cutting of monocrystalline silicon with diamond tools in relation to tool groove wear, Wear. 263 (2007) 1459–1466.
[36] M.B. Cai, X.P. Li, M. Rahman, Study of the mechanism of nanoscale ductile mode cutting of silicon using molecular dynamics simulation, Int. J. Mach. Tools Manuf. 47 (2007) 75–80.
[37] G. Yuri, D.Vladislav, eds., High-Pressure Surface Science and Engineering, Institute of Physics Publishing, 2004.
[38] B. Rosa, P. Mognol, J. Hascoët, Laser polishing of additive laser manufacturing surfaces, J. Laser Appl. 27 (2015) S29102-1–7.
[39] F.E. Pfefferkorn, N.A. Duffie, X. Li, M. Vadali, C. Ma, Improving surface finish in pulsed laser micro polishing using thermocapillary flow, CIRP Ann. - Manuf. Technol. 62 (2013) 203–206.
[40] E. Ukar, A. Lamikiz, L.N. López de Lacalle, D. del Pozo, J.L. Arana, Laser polishing of tool steel with CO2 laser and high-power diode laser, Int. J. Mach. Tools Manuf. 50 (2010) 115–125.
[41] S. Marimuthu, A. Triantaphyllou, M. Antar, D. Wimpenny, H. Morton, M. Beard, Laser polishing of selective laser melted components, Int. J. Mach. Tools Manuf. 95 (2015) 97–104.
[42] C. Nüsser, I. Wehrmann, E. Willenborg, Influence of intensity distribution and pulse duration on laser micro polishing, Phys. Procedia. 12 (2011) 462–471.
[43] C. Ma, M. Vadali, N.A. Duffie, F.E. Pfefferkorn, X. Li, Melt pool flow and surface evolution during pulsed laser micro polishing of Ti6Al4V, ASME 2013 Int. Manuf. Sci. Eng. Conf. Collocated with 41st North Am. Manuf. Res. Conf. MSEC 2013. 1 (2013) 1–8.
[44] T.L. Perry, D. Werschmoeller, X. Li, F.E. Pfefferkorn, N.A. Duffie, Pulsed laser polishing of micro-milled Ti6Al4V samples, J. Manuf. Process. 11 (2009) 74–81.
[45] M. Hatano, S. Moon, M. Lee, K. Suzuki, C.P. Grigoropoulos, Excimer laser-induced temperature field in melting and resolidification of silicon thin films, J. Appl. Phys. 87 (2000) 36–43.
[46] H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano, Y. Kuwano, Enlargement of polysi film grain size by excimer laser annealing and its application to high-performance poly-si thin film transistor, Jpn. J. Appl. Phys. 30 (1991) 3700–3703.
[47] H. Azuma, A. Takeuchi, T. Ito, H. Fukushima, T. Motohiro, M. Yamaguchi, Pulsed KrF excimer laser annealing of silicon solar cell, Sol. Energy Mater. Sol. Cells. 74 (2002) 289–294.
[48] C.H. Kim, I.H. Song, W.J. Nam, M.K. Han, A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure, IEEE Electron Device Lett. 23 (2002) 315–317.
[49] P.M. Smith, P.G. Carey, T.W. Sigmon, Excimer laser crystallization and doping of silicon films on plastic substrates, Appl. Phys. Lett. 70 (1997) 342–344.
[50] J. Dore, D. Ong, S. Varlamov, R. Egan, M.A. Green, Progress in laser-crystallized thinfilm polycrystalline silicon solar cells: Intermediate layers, light trapping, and metallization, IEEE J. Photovoltaics. 4 (2014) 33–39.
[51] G. Fisicaro, A. La Magna, Modeling of laser annealing, J. Comput. Electron. 13 (2014) 70–94.
[52] K.K. Ong, K.L. Pey, P.S. Lee, A.T.S. Wee, X.C. Wang, Y.F. Chong, Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing, Appl. Phys. Lett. 89 (2006) 172111.
[53] R.F. Wood, G.E. Giles, Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting, Phys. Rev. B. 23 (1981) 2923–2942.
[54] S.F. Lombardo, S. Boninelli, F. Cristiano, G. Fisicaro, G. Fortunato, M.G. Grimaldi, G. Impellizzeri, M. Italia, A. Marino, R. Milazzo, E. Napolitani, V. Privitera, A. La Magna, Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches, Mater. Sci. Semicond. Process. 62 (2017) 80–91.
[55] O. Nast, A.J. Hartmann, Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon, J. Appl. Phys. 88 (2000) 716–724.
[56] M.O. Thompson, G.J. Galvin, J.W. Mayer, Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation, Phys. Rev. Lett. 52 (1984) 2360–2364.
[57] Z. Yuan, Q. Lou, J. Zhou, J. Dong, Y. Wei, Z. Wang, H. Zhao, G. Wu, Numerical and experimental analysis on green laser crystallization of amorphous silicon thin films, Opt. Laser Technol. 41 (2009) 380–383.
[58] Z. Li, H. Zhang, Z. Shen, X. Ni, Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon, J. Appl. Phys. 114 (2013) 033104.
[59] L. Huang, J. Jin, W. Shi, Z. Yuan, W. Yang, Z. Cao, L. Wang, J. Zhou, Q. Lou, Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films, Mater. Sci. Semicond. Process. 16 (2013) 1982–1987.
[60] J. Bonse, J. Krüger, Pulse number dependence of laser-induced periodic surface structures for femtosecond laser irradiation of silicon, J. Appl. Phys. 108 (2010).
[61] F. Constache, S. Kouteva-Arguirova, J. Reif, Sub–damage–threshold femtosecond laser ablation from crystalline Si: surface nanostructures and phase transformation, Appl. Phys. A Mater. Sci. Process. 79 (2004) 1429–1432.
[62] I. Gnilitskyi, V. Gruzdev, N.M. Bulgakova, T. Mocek, L. Orazi, Mechanisms of highregularity periodic structuring of silicon surface by sub-MHz repetition rate ultrashort laser pulses, Appl. Phys. Lett. 109 (2016).
[63] X. Ji, L. Jiang, X. Li, W. Han, Y. Liu, A. Wang, Y. Lu, Femtosecond laser-induced cross-periodic structures on a crystalline silicon surface under low pulse number irradiation, Appl. Surf. Sci. 326 (2015) 216–221.
[64] R. Le Harzic, F. Stracke, H. Zimmermann, Formation mechanism of femtosecond laserinduced high spatial frequency ripples on semiconductors at low fluence and high repetition rate, J. Appl. Phys. 113 (2013).
[65] G. Miyaji, M. Hagiya, K. Miyazaki, Excitation of surface plasmon polaritons on silicon with an intense femtosecond laser pulse, Phys. Rev. B. 96 (2017) 1–6.
[66] G.D. Tsibidis, M. Barberoglou, P.A. Loukakos, E. Stratakis, C. Fotakis, Dynamics of ripple formation on silicon surfaces by ultrashort laser pulses in subablation conditions, Phys. Rev. B - Condens. Matter Mater. Phys. 86 (2012) 1–14.
[67] G.D. Tsibidis, C. Fotakis, E. Stratakis, From ripples to spikes: A hydrodynamical mechanism to interpret femtosecond laser-induced self-assembled structures, Phys. Rev. B - Condens. Matter Mater. Phys. 92 (2015) 1–6.
[68] O. Varlamova, F. Costache, J. Reif, M. Bestehorn, Self-organized pattern formation upon femtosecond laser ablation by circularly polarized light, Appl. Surf. Sci. 252 (2006) 4702–4706.
[69] O. Varlamova, J. Reif, S. Varlamov, M. Bestehorn, The laser polarization as control parameter in the formation of laser-induced periodic surface structures: Comparison of numerical and experimental results, Appl. Surf. Sci. 257 (2011) 5465–5469.
[70] M. Hongo, S. Matsuo, Subnanosecond-laser-induced periodic surface structures on prescratched silicon substrate, Appl. Phys. Express. 9 (2016) 7–10.
[71] M. Mezera, G.R.B.E. Römer, Model based optimization of process parameters to produce large homogeneous areas of laser-induced periodic surface structures, Opt. Express. 27 (2019) 6012.
[72] S. Sarbada, Z. Huang, Y.C. Shin, X. Ruan, Low-reflectance laser-induced surface nanostructures created with a picosecond laser, Appl. Phys. A Mater. Sci. Process. 122 (2016) 1–10.
[73] A. Talbi, S. Kaya-Boussougou, A. Sauldubois, A. Stolz, C. Boulmer-Leborgne, N. Semmar, Laser-induced periodic surface structures formation on mesoporous silicon from nanoparticles produced by picosecond and femtosecond laser shots, Appl. Phys. A Mater. Sci. Process. 123 (2017) 1–7.
[74] M.S. Trtica, B.M. Gakovic, B.B. Radak, D. Batani, T. Desai, M. Bussoli, Periodic surface structures on crystalline silicon created by 532 nm picosecond Nd:YAG laser pulses, Appl. Surf. Sci. 254 (2007) 1377–1381.
[75] B.K. Nayak, K. Sun, C. Rothenbach, M.C. Gupta, Self-organized 2D periodic arrays of nanostructures in silicon by nanosecond laser irradiation, Appl. Opt. 50 (2011) 2349.
[76] P. Nürnberger, H.M. Reinhardt, H.C. Kim, E. Pfeifer, M. Kroll, S. Müller, F. Yang, N.A. Hampp, Orthogonally superimposed laser-induced periodic surface structures (LIPSS) upon nanosecond laser pulse irradiation of SiO 2 /Si layered systems, Appl. Surf. Sci. 425 (2017) 682–688.
[77] S. Watanabe, Y. Yoshida, S. Kayashima, S. Yatsu, M. Kawai, T. Kato, In situ observation of self-organizing nanodot formation under nanosecond-pulsed laser irradiation on Si surface, J. Appl. Phys. 108 (2010).
[78] M. Weizman, N.H. Nickel, I. Sieber, B. Yan, Laser-induced self-organization in silicon-germanium thin films, J. Appl. Phys. 103 (2008).
[79] Y. Yoshida, K. Oosawa, J. Wajima, S. Watanabe, Y. Matsuo, T. Kato, Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surface, Appl. Surf. Sci. 307 (2014) 24–27.
[80] Y. Yoshida, N. Sakaguchi, S. Watanabe, T. Kato, Self-organized two-dimensional vidro-nanodot array on laser-irradiated Si surface, Appl. Phys. Express. 4 (2011).
[81] G.A. Martsinovskiǐ, G.D. Shandybina, D.S. Smirnov, S. V. Zabotnov, L.A. Golovan’, V.Y. Timoshenko, P.K. Kashkarov, Ultrashort excitations of surface polaritons and waveguide modes in semiconductors, Opt. Spectrosc. (English Transl. Opt. i Spektrosk. 105 (2008) 67–72.
[82] P. Schaaf, ed., Laser Processing of Materials, Springe Series in Materials Science, 2010.
[83] W.M. Steen, J. Mazumder, Laser Material Processing, Fourth edi, Springer, 2010.
[84] P.C. Lill, M. Dahlinger, J.R. Köhler, Boron partitioning coefficient above unity in laser crystallized silicon, Materials (Basel). 10 (2017) 189.
[85] G. Fisicaro, K. Huet, R. Negru, M. Hackenberg, P. Pichler, N. Taleb, A. La Magna, Anomalous impurity segregation and local bonding fluctuation in l-Si, Phys. Rev. Lett. 110 (2013) 117801.
[86] H. Seidel, L. Csepregi, A. Heuberger, H. Baumgartel, Anisotropic Etching of Crystalline Silicon in Alkaline Solutions, J. Electrochem. Soc. 137 (1990) 3612–3626.
[87] Y.G. Gogotsi, C. Baek, F. Kirscht, Raman microspectroscopy study of processinginduced phase transformations and residual stress in silicon, Semicond. Sci. Technol. 14 (1999) 936–944.
[88] I. Stich, R. Car, M. Parrinello, Bonding and disorder in liquid silicon, Phys. Rev. Lett. 63 (1989) 2240–2243.
[89] J. Sun, R.C. Remsing, Y. Zhang, Z. Sun, A. Ruzsinszky, H. Peng, Z. Yang, A. Paul, U. Waghmare, X. Wu, M.L. Klein, J.P. Perdew, Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional, Nat. Chem. 8 (2016) 831–836.
[90] R.C. Remsing, M.L. Klein, J. Sun, Dependence of the structure and dynamics of liquid silicon on the choice of density functional approximation, Phys. Rev. B. 96 (2017) 024203.
[91] J.T. Okada, P.H.L. Sit, Y. Watanabe, Y.J. Wang, B. Barbiellini, T. Ishikawa, M. Itou, Y. Sakurai, A. Bansil, R. Ishikawa, M. Hamaishi, T. Masaki, P.F. Paradis, K. Kimura, T. Ishikawa, S. Nanao, Persistence of covalent bonding in liquid silicon probed by inelastic x-ray scattering, Phys. Rev. Lett. 108 (2012) 067402.
[92] N. Jakse, A. Pasturel, Dynamics of liquid and undercooled silicon: An ab initio molecular dynamics study, Phys. Rev. B. 79 (2009) 114206.
[93] T. Morishita, How does tetrahedral structure grow in liquid silicon upon supercooling?, Phys. Rev. Lett. 97 (2006) 165502.
[94] H. Tanaka, Simple view of waterlike anomalies of atomic liquids with directional bonding, Phys. Rev. B. 66 (2002) 064202.
[95] H. Tanaka, Two-order-parameter description of liquids: critical phenomena and phase separation of supercooled liquids, J. Phys. Condens. Matter. 11 (1999) L159–L168.
[96] P. Ganesh, M. Widom, Liquid-liquid transition in supercooled silicon determined by first-principles simulation, Phys. Rev. Lett. 102 (2009) 075701.
[97] N. Jakse, A. Pasturel, Liquid-liquid phase transformation in silicon: Evidence from first-principles molecular dynamics simulations, Phys. Rev. Lett. 99 (2007) 205702.
[98] S. Sastry, C. Austen Angell, Liquid–liquid phase transition in supercooled silicon, Nat. Mater. 2 (2003) 739–743.
[99] H. Kodera, Diffusion Coefficients of Impurities in Silicon Melt, Jpn. J. Appl. Phys. 2 (1963) 212–219.
[100] R.F. Wood, Model for nonequilibrium segregation during pulsed laser annealing, Appl. Phys. Lett. 37 (1980) 302–304.
[101] R. Saha, W.D. Nix, Effects of the substrate on the determination of thin mechanical properties by nanoindentation, Acta Mater. 50 (2002) 23–28.
[102] B. Bhushan, X. Li, Micromechanical and tribological characterization of doped singlecrystal silicon and polysilicon films for microelectromechanical systems devices, J. Mater. Res. 12 (1997) 54–63.
[103] R.Fabbro, P.Peyre, L.Berthe, X.Scherpereel, Physics and applications of laser-shock processing, J. Laser Appl. 10 (1998) 265–279.
[104] L. Berthe, R. Fabbro, P. Peyre, L. Tollier, E. Bartnicki, Shock waves from a waterconfined laser-generated plasma, J. Appl. Phys. 82 (1997) 2826–2832.
[105] S. Steffens, C. Becker, J.-H. Zollondz, A. Chowdhury, A. Slaoui, S. Lindekugel, U. Schubert, R. Evans, B. Rech, Defect annealing processes for polycrystalline silicon thin-film solar cells, Mater. Sci. Eng. B. 178 (2013) 670–675.
[106] W.W. Mullins, R.F. Sekerka, Morphological Stability of a Particle Growing by Diffusion or Heat Flow, J. Appl. Phys. 34 (1963) 323–329.
[107] J. Yan, T. Asami, T. Kuriyagawa, Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy, Precis. Eng. 32 (2008) 186–195.
[108] G. Lucazeau, L. Abello, Micro-Raman analysis of residual stresses and phase transformations in crystalline silicon under microindentation, J. Mater. Res. 12 (1997) 2262–2273.
[109] R.G. Sparks, M.A. Paesler, Micro-Raman analysis of stress in machined silicon and germanium, Precis. Eng. 10 (1988) 191–198.
[110] V. Paillard, P. Puech, M. a. Laguna, P. Temple-Boyer, B. Caussat, J.P. Couderc, B. De Mauduit, Resonant Raman scattering in polycrystalline silicon thin films, Appl. Phys. Lett. 73 (1998) 1718–1720.
[111] Z. Arnaud, ed., Raman imaging, Springer-Verlag Berlin Heidelberg, 2012.
[112] A. Ogura, Y. Kakemura, D. Kosemura, T. Yoshida, M. Masaki, K. Nishida, R. Kawakami, N. Yamamoto, Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy, J. Mater. Sci. Mater. Electron. 19 (2008) 122–126.
[113] Z. Xu, Z. He, Y. Song, X. Fu, M. Rommel, X. Luo, A. Hartmaier, J. Zhang, F. Fang, Topic Review: Application of Raman Spectroscopy Characterization in Micro/NanoMachining, Micromachines. 9 (2018) 361.
[114] J. Kucytowski, K. Wokulska, Lattice parameter measurements of boron doped Si single crystals, Cryst. Res. Technol. 40 (2005) 424–428.
[115] F.M. Ross, J. Tersoff, R.M. Tromp, Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100), Microsc. Microanal. 4 (1998) 254–263.
[116] Z. Li, B. Lin, W. Sun, X. Zhang, Simultaneous Double Side Grinding of Silicon Wafers: A Further Investigation into Grinding Marks Pattern, 27 (2010) 395–400.
[117] G.J. Pietsch, M. Kerstan, Understanding simultaneous double-disk grinding: Operation principle and material removal kinematics in silicon wafer planarization, Precis. Eng. 29 (2005) 189–196.
[118] H. Wang, X. Liu, Z.M. Zhang, Absorption coefficients of crystalline silicon at wavelengths from 500 nm to 1000 nm, Int. J. Thermophys. 34 (2013) 213–225.
[119] A.C. Tarn, I.K. Pour, T. Nguyen, D. Krajnovich, P. Baumgart, Experimental and theoretical studies of bump formation during laser texturing of ni-p disk substrates, IEEE Trans. Magn. 32 (1996) 3771–3773.
[120] T.D. Bennett, D.J. Krajnovich, C.P. Grigoropoulos, P. Baumgart, A.C. Tam, Marangoni Mechanism in Pulsed Laser Texturing of Magnetic Disk Substrates, J. Heat Transfer. 119 (1997) 589.
[121] H. Huang, J. Yan, Volumetric and timescale analysis of phase transformation in singlecrystal silicon during nanoindentation, Appl. Phys. A. 122 (2016) 607.
[122] A. Kailer, Y.G. Gogotsi, K.G. Nickel, Phase transformations of silicon caused by contact loading, J. Appl. Phys. 81 (1997) 3057–3063.
[123] V. Domnich, Y. Gogotsi, Phase Transformations in Silicon Under Contact Loading, Rev. Adv. Mater. Sci. 3 (2002) 1–36.
[124] D.E. Kim, S.I. Oh, Atomistic simulation of structural phase transformations in monocrystalline silicon induced by nanoindentation, Nanotechnology. 17 (2006) 2259–2265.