(1) Manzeli, S.; Ovchinnikov, D.; Pasquier, D.; Yazyev, O. V.; Kis, A. 2D Transition Metal Dichalcogenides. Nat. Rev. Mater. 2017, 2, 17033.
(2) Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides. Nat. Nanotechnol. 2012, 7, 699— 712.
(3) Mak, K. F.; Shan, J. Photonics and Optoelectronics of 2D Semiconductor Transition Metal Dichalcogenides. Nat. Photonics 2016, 10, 216—226.
(4) Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-Like Two-Dimensional Materials. Chem. Rev. 2013, 113, 3766—3798.
(5) Schaibley, J. R.; Yu, H. Y.; Clark, G.; Rivera, P.; Ross, J. S.; Seyler, K. L.; Yao, W.; Xu, X. D. Valleytronics in 2D Materials. Nat. Rev. Mater. 2016, 1, 16055.
(6) Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
(7) Han, B.; Robert, C.; Courtade, E.; Manca, M.; Shree, S.; Amand, T.; Renucci, P.; Taniguchi, T.; Watanabe, K.; Marie, X.; Golub, L. E.; Glazov, M. M.; Urbaszek, B. Exciton States in Monolayer MoSe2 and MoTe2 Probed by Upconversion Spectroscopy. Phys. Rev. X 2018, 8, 031073 .
(8) Morozov, Y. V.; Kuno, M. Optical Constants and Dynamic Conductivities of Single Layer MoS2, MoSe2, and WSe2. Appl. Phys. Lett. 2015, 107, 083103.
(9) Raja, A.; Chaves, A.; Yu, J.; Arefe, G.; Hill, H. M.; Rigosi, A. F.; Berkelbach, T. C.; Nagler, P.; Schuller, C.; Korn, T.; Nuckolls, C.; Hone, J.; Brus, L. E.; Heinz, T. F.; Reichman, D. R.; Chernikov, A. Coulomb Engineering of the Bandgap and Excitons in Two-Dimensional Materials. Nat. Commun. 2017, 8, 15251.
(10) Bawden, L.; Cooil, S. P.; Mazzola, F.; Riley, J. M.; Collins-McIntyre, L. J.; Sunko, V.; Hunvik, K. W. B.; Leandersson, M.; Polley, C. M.; Balasubramanian, T.; Kim, T. K.; Hoesch, M.; Wells, J. W.; Balakrishnan, G.; Bahramy, M. S.; King, P. D. C. Spin-Valley Locking in the Normal State of a Transition- Metal Dichalcogenide Superconductor. Nat. Commun. 2016, 7, 11711.
(11) Li, A. J.; Zhu, X. C.; Rhodes, D.; Samouce, C. C.; Balicas, L.; Hebard, A. F. van der Waals Schottky Barriers as Interface Probes of the Correlation between Chemical Potential Shifts and Charge Density Wave Formation in 1T-TiSe2 and 2H-NbSe2. Phys. Rev. B 2017, 96, 125301.
(12) Miao, G. Y.; Xue, S. W.; Li, B.; Lin, Z. J.; Liu, B.; Zhu, X. T.; Wang, W. H.; Guo, J. D. Real-Space Investigation of the Charge Density Wave in VTe2 Monolayer with Broken Rotational and Mirror Symmetries. Phys. Rev. B 2020, 101, 035407.
(13) Sayers, C. J.; Farrar, L. S.; Bending, S. J.; Cattelan, M.; Jones, A. J. H.; Fox, N. A.; Kociok-Kohn, G.; Koshmak, K.; Laverock, J.; Pasquali, L.; Da Como, E. Correlation between Crystal Purity and the Charge Density Wave in 1T-VSe2. Phys. Rev. Mater. 2020, 4, 025002.
(14) Onga, M.; Zhang, Y. J.; Ideue, T.; Iwasa Y. Exciton Hall Effect in Monolayer MoS2. Nat. Mater. 2017, 16, 1193—1197.
(15) Tang, Y. H.; Mak, K. F.; Shan, J. Long Valley Lifetime of Dark Excitons in Single-Layer WSe2. Nat. Commun. 2019, 10, 4047.
(16) Xiao, D.; Liu, G. B.; Feng, W. X.; Xu, X. D.; Yao, W. Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides. Phys. Rev. Lett. 2012, 108, 196802.
(17) Xu, X. D.; Yao, W.; Xiao, D.; Heinz, T. F. Spin and Pseudospins in Layered Transition Metal Dichalcogenides. Nat. Phys. 2014, 10, 343—350.
(18) Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Singel-Layer MoS2 Transistors. Nat. Nanotech. 2011, 6, 147—150.
(19) Das, S.; Appenzeller, J. WSe2 Field Effect Transistors with Enhanced Ambipolar Characteristics. Appl. Phys. Lett. 2013, 103, 103501.
(20) Kanazawa, T.; Amemiya, T.; Ishikawa, A.; Upadhyaya, V.; Tsuruta, K.; Tanaka, T.; Miyamoto, Y. Few-Layer HfS2 Transistors. Sci. Rep. 2016, 6, 22277.
(21) Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q. X.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C. M.; Wong, H. S. P.; Javey, A. MoS2 Transistors with 1-Nanometer Gate Lengths. Science 2016, 354, 99—102.
(22) Lee, G. H.; Cui, X.; Kim, Y. D.; Arefe, G.; Zhang, X.; Lee, C. H.; Ye, F.; Watanabe, K.; Taniguchi, T.; Kim, P.; Hone, J. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano 2015, 9, 7019— 7026.
(23) Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y. F.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide. Nat. Nanotechnol. 2014, 9, 262—267.
(24) Ajayi, O. A.; Ardelean, J. V.; Shepard, G. D.; Wang, J.; Antony, A.; Taniguchi, T.; Watanabe, K.; Heinz, T. F.; Strauf, S.; Zhu, X. Y.; Hone, J. C. Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers. 2D Mater. 2017, 4, 031011.
(25) Cadiz, F.; Courtade, E.; Robert, C.; Wang, G.; Shen, Y.; Cai, H.; Taniguchi, T.; Watanabe, K.; Carrere, H.; Lagarde, D.; Manca, M.; Amand, T.; Renucci, P.; Tognay, S.; Marie, X.; Urbaszek, B. Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures. Phys. Rev. X 2017, 7, 021026.
(26) Chen, J. H.; Jang, C.; Xiao, S. D.; Ishigami, M.; Fuhrer, M. S. Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2. Nat. Nanotech. 2008, 3, 206—209.
(27) Zhang, Y. B.; Tan, Y. W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene. Nature 2005, 438, 201—204.
(28) Hwang, E. H.; Das Sarma, S. Acoustic Phonon Scattering Limited Carrier Mobility in Two- Dimensional Extrinsic Graphene. Phys. Rev. B 2008, 77, 115449.
(29) Cassabois, G.; Valvin, P.; Gil, B. Hexagonal Boron Nitride is an Indirect Bandgap Semiconductor. Nat. Photonics 2016, 10, 262.
(30) Cui, X.; Lee, G.-H.; Kim, Y. D.; Arefe, G.; Huang, P. H.; Lee, C.-H.; Chenet, D. A.; Zhang, X.; Wang, L.; Ye, F.; Pizzocchero, F.; Jessen, B. S.; Watanabe, K.; Taniguchi, T.; Muller, D. A.; Low, T.; Kim, P.; Hone, J. Multi-Terminal Transport Measurements of MoS2 Using a van der Waals Heterostructure Device Platform. Nat. Nanotech. 2015, 10, 534—540.
(31) Seyler, K. L.; Rivera, P.; Yu, H. Y.; Wilson, N. P.; Ray, E. L.; Mandrus, D. G.; Yan, J. Q.; Yao, W.; Xu, X. D. Signatures of Moire-Trapped Valley Excitons in MoSe2/WSe2 Heterobilayers. Nature 2019, 567, 66.
(32) Tran, K.; Moody, G.; Wu, F. C.; Lu, X. B.; Choi, J.; Kim, K.; Rai, A.; Sanchez, D. A.; Quan, J. M.; Singh, A.; Embley, J.; Zepeda, A.; Campbell, M.; Autry, T.; Taniguchi, T.; Watanabe, K.; Lu, N.; Banerjee, S. K.; Silveman, K. L.; Kim, S.; et al. Evidence for Moire Excitons in van der Waals Heterostructures. Nature 2019, 567, 71.
(33) Wang, J.; Ardelean, J.; Bai, Y. S.; Steinhoff, A.; Florian, M.; Jahnke, F.; Xu, X. D.; Kira, M.; Hone, J.; Zhu, X. Y. Optical Generation of High Carrier Densities in 2D Semiconductor Heterobilayers. Sci. Adv. 2019, 5, 0145.
(34) Kretinin, A. V.; Cao, Y.; Tu, J. S.; Yu, G. L.; Jalil, R.; Novoselov, K. S.; Haigh, S. J.; Gholinia, A.; Mishchenko, A.; Lozada, M.; Georgiou, T.; Woods, C. R.; Withers, F.; Blake, P.; Eda, G.; Wirsig, A.; Hucho, C.; Watanabe, K.; Taniguchi, T.; Geim, A. K.; et al. Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals. Nano Lett. 2014, 14, 3270—3276.
(35) Kang, K.; Lee, K.-H.; Han, Y.; Gao, H.; Xie, S.; Muller, D. A.; Park, J. Layer-by-Layer Assembly of Two-Dimensional Materials into Wafer-Scale Heterostructures. Nature 2017, 550, 229—233.
(36) Purdie, D. G.; Pugno, N. M.; Taniguchi, T.; Watanabe, K.; Ferrari, A. C.; Lombardo, A. Cleaning Interfaces in Layered Materials Heterostructures. Nat. Commun. 2018, 9, 5387.
(37) Lu, X. B.; Stepanov, P.; Yang, W.; Xie, M.; Aamir, M. A.; Das, I.; Urgell, C.; Watanabe, K.; Taniguchi, T.; Zhang, G. Y.; Bachtold, A.; MacDonald, A. H.; Efetov, D. K. Superconductors, Orbital Magnets and Correlated States in Magic-Angle Bilayer Graphene. Nature 2019, 574, 653.
(38) Rosenberger, M. R.; Chuang, H. J.; McCreary, K. M.; Hanbicki, A. T.; Sivaram, S. V.; Jonker, B. T. Nano-"Squeegee" for the Creation of Clean 2D Material Interfaces. ACS Appl. Mater. Interfaces 2018, 10, 10379—10387.
(39) Hanbicki, A. T.; Chuang, H. J.; Rosenberger, M. R.; Hellberg, C. S.; Sivaram, S. V.; McCreary, K. M.; Mazin, II; Jonker, B. T. Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure. ACS Nano 2018, 12, 4719—4726.
(40) Arora, A.; Nogajewski, K.; Molas, M.; Koperski, M.; Potemski, M. Exciton Band Structure in Layered MoSe2: From a Monolayer to the Bulk Limit. Nanoscale 2015, 7, 20769—20775.
(41) Tongay, S.; Suh, J.; Ataca, C.; Fan, W.; Luce, A.; Kang, J. S.; Liu, J.; Ko, C.; Raghunathanan, R.; Zhou, J.; Ogletree, F.; Li, J.; Grossman, J. C.; Wu, J. Defects Activated Photoluminescence in Two-Dimensional Semiconductors: Interplay between Bound, Charged, and Free Excitons. Sci. Rep. 2013, 3, 2657.
(42) Hao, K.; Specht, J. F.; Nagler, P.; Xu, L. X.; Tran, K.; Singh, A.; Dass, C. K.; Schuller, C.; Korn, T.; Richter, M.; Knorr, A.; Li, X.; Moody, G. Neutral and Charged Inter-Valley Biexcitons in Monolayer MoSe2. Nat. Commun. 2017, 8, 15552.
(43) Vaclavkova, D.; Wyzula, J.; Nogajewski, K.; Bartos, M.; Slobodeniuk, A. O.; Faugeras, C.; Potemski, M.; Molas, M. R. Singlet and Triplet Trions in WS2 Monolayer Encapsulated in Hexagonal Boron Nitride. Nanotechnology 2018, 29, 32.
(44) Okada, M.; Miyauchi, Y.; Matsuda, K.; Taniguchi, T.; Watanabe, K.; Shinohara, H.; Kitaura, R. Observation of Biexcitonic Emission at Extremely Low Power Density in Tungsten Disulfide Atomic Layers Grown on Hexagonal Boron Nitride. Sci. Rep. 2017, 7, 322.
(45) Huang, J. N.; Hoang, T. B.; Mikkelsen, M. H. Probing the Origin of Excitonic States in Monolayer WSe2. Sci. Rep. 2016, 6, 22414.
(46) Shepard, G. D.; Ardelean, J. V.; Ajayi, O. A.; Rhodes, D.; Zhu, X. Y.; Hone, J. C.; Strauf, S. Trion- Species-Resolved Quantum Beats in MoSe2. ACS Nano 2017, 11, 11550—11558.
(47) Srivastava, P. K.; Ghosh, S. Defect Engineering as a Versatile Route to Estimate Various Scattering Mechanisms in Monolayer Graphene on Solid Substrates. Nanoscale 2015, 7, 16079—16086.
(48) Maher, P.; Wang, L.; Gao, Y. D.; Forsythe, C.; Taniguchi, T.; Watanabe, K.; Abanin, D.; Papic, Z.; Cadden-Zimansky, P.; Hone, J.; Kim, P.; Dean, C. R. Tunable Fractional Quantum Hall Phases in Bilayer Graphene. Science 2014, 345, 61—64.
(49) Uwanno, T.; Taniguchi, T.; Watanabe, K.; Nagashio, K. Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors. ACS Appl. Mater. Interfaces 2018, 10, 28780—28788.
(50) Shree, S.; Semina, M.; Robert, C.; Han, B.; Amand, T.; Balocchi, A.; Manca, M.; Courtade, E.; Marie, X.; Taniguchi, T.; Watanabe, K.; Glazov, M. M.; Urbaszek, B. Observation of Exciton-Phonon Coupling in MoSe2 Monolayers. Phys. Rev. B 2018, 98, 035302.
(51) Lorchat, E.; Lopez, L. E. P.; Robert, C.; Lagarde, D.; Froehlicher, G.; Taniguchi, T.; Watanabe, K.; Marie, X.; Berciaud, S. Filtering the Photoluminescence Spectra of Atomically Thin Semiconductors with Graphene. Nat. Nanotech. 2020, 15, 283.
(52) He, Z. Y.; Xu, W. S.; Zhou, Y. Q.; Wang, X. C.; Sheng, Y. W.; Rong, Y. M.; Guo, S. Q.; Zhang, J. Y.; Smith, J. M.; Warner, J. H. Biexciton Formation in Bilayer Tungsten Disulfide. ACS Nano 2016, 10, 2176— 2183.
(53) Paradisanos, I.; Germanis, S.; Pelekanos, N. T.; Fotakis, C.; Kymakis, E.; Kioseoglou, G.; Stratakis, E. Room Temperature Observation of Biexcitons in Exfoliated WS2 Monolayers. Appl. Phys. Lett. 2017, 110, 193102.
(54) Goryca, M.; Li, J.; Stier, A. V.; Taniguchi, T.; Watanabe, K.; Courtade, E.; Shree, S.; Robert, C.; Urbaszek, B.; Marie, X.; Crooker, S. A. Revealing Exciton Masses and Dielectric Properties of Monolayer Semiconductors with High Magnetic Fields. Nat. Commun. 2019, 10, 4172.
(55) Moody, G.; Dass, C. K.; Hao, K.; Chen, C. H.; Li, L. J.; Singh, A.; Tran, K.; Clark, G.; Xu, X. D.; Berghauser, G.; Malic, E.; Knorr, A.; Li, X. Intrinsic Homogeneous Linewidth and Broadening Mechanisms of Excitons in Monolayer Transition Metal Dichalcogenides. Nat. Commun. 2015, 6, 8315.
(56) Masubuchi, S.; Morimoto, M.; Morikawa, S.; Onodera, M.; Asakawa, Y.; Watanabe, K.; Taniguchi, T.; Machida, T. Autonomous Robotic Searching and Assembly of Two-Dimensional Crystals to Build van der Waals Superlattices. Nat. Commun. 2018, 9, 1413.
(57) Uchiyama, Y.; Kutana, A.; Watanabe, K.; Taniguchi, T.; Kojima, K.; Endo, T.; Miyata, Y.; Shinohara, H.; Kitaura, R. Momentum-Forbidden Dark Excitons in hBN-Encapsulated Monolayer MoS2. npj 2D Mater. Appl. 2019, 3, 1—6.
(58) Sader, J. E.; Chon, J. W. M.; Mulvaney, P. Calibration of Rectangular Atomic Force Microscope Cantilevers. Rev. Sci. Instrum. 1999, 70, 3967—3969.
(59) Schmit, P. P. The Interaction between Mott-Wannier Excitons in a Vibrating Lattice. J. Phys. C: Sol. Stat. Phys. 1969, 2, 785.
(60) Shahnazaryan, V.; Shelykh, I. A.; Kyriienko, O. Attractive Coulomb Interaction of Two-Dimensional Rydberg Excitons. Phys. Rev. B 2016, 93, 9.
(61) Kylanpaa, I.; Komsa, H. P. Binding Energies of Exciton Complexes in Transition Metal Dichalcogenide Monolayers and Effect of Dielectric Environment. Phys. Rev. B 2015, 92, 6.
(62) Szyniszewski, M.; Mostaani, E.; Drummond, N. D.; Fal'ko, V. I. Binding Energies of Trions and Biexcitons in Two-Dimensional Semiconductors from Diffusion Quantum Monte Carlo Calculations. Phys. Rev. B 2017, 95, 5.
(63) Zhang, D. K.; Kidd, D. W.; Varga, K. Excited Biexcitons in Transition Metal Dichalcogenides. Nano Lett. 2015, 15, 7002—7005.
(64) Roch, J. G.; Leisgang, N.; Froehlicher, G.; Makk, P.; Watanabe, K.; Taniguchi, T.; Schonenberger, C.; Warburton, R. J. Quantum-Confined Stark Effect in a MoS2 Monolayer van der Waals Heterostructure. Nano Lett. 2018, 18, 1070—1074.
(65) Hoshi, Y; Kuroda, T.; Okada, M.; Moriya, S.; Masubuchi, S.; Watanabe, K.; Taniguchi, T.; Kitaura, R.; Machida, T. Suppression of Exciton-Exciton Annihilation in Tungsten Disulfide Monolayers Encapsulated by Hexagonal Boron Nitrides. Phys. Rev. B 2018, 95, 241403.
論文の公開元へ
