Nanoscale phase change on Ge2Sb2Te5 thin films induced by optical near fields with photoassisted scanning tunneling microscope

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FIG. 4. (a) Topographic image of Ge2Sb2Te5(100 nm)/HOPG surface with a 100 nm

 100 nm area. (b) IðV ¼ 200 mVÞ=IðV ¼ 600 mVÞ mapping of the same

area as (a) before and (c) after laser irradiation.

localized within a few nanometers from the tip center due to the field

enhancement by the tip-sample gap.29,42 It is well known that the

amorphous-to-crystalline phase change can be introduced by either

weak heating6,7 or irradiating with intense terahertz pulses.8 These will

be conducted in the future to examine the rewritable characteristics of

the nanoscale phase change of GST.

In conclusion, we have demonstrated that STM coupled with

femtosecond laser pulses can be utilized to non-thermally create

nanometer-scale amorphous marks on GST surfaces. The amorphous

region can be detected through either the changes in the topographic

Appl. Phys. Lett. 117, 211102 (2020); doi: 10.1063/5.0032573

Published under license by AIP Publishing

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