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大学・研究所にある論文を検索できる 「Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface」の論文概要。リケラボ論文検索は、全国の大学リポジトリにある学位論文・教授論文を一括検索できる論文検索サービスです。
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Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface

Y. Matsushita 東京工業大学 DOI:https://doi.org/10.1063/1.5143555

2020.02.20

概要

We identify a carbon dangling-bond center intrinsically formed at thermally oxidized 4H-SiC(0001)/SiO2 interfaces. Our electrically detected-magnetic-resonance spectroscopy and first-principles calculations demonstrate that this center, which we name “the PbC center,” is formed at a carbon adatom on the 4H-SiC(0001) honeycomb-like structure. The PbC center (Si3ΞC-, where “-” represents an unpaired elec- tron) is determined to be a just carbon version of the famous Pb center (Si dangling-bond center, Si3ΞSi-) at Si(111)/SiO2 interfaces because we found close similarities between their wave functions. The PbC center acts as one of the major interfacial traps in 4H-SiC(0001) metal- oxide-semiconductor field-effect transistors (MOSFETs), which decreases the free-carrier density and the field-effect mobility of 4H-SiC(0001) MOSFETs. The formation of the PbC centers has the role of reducing the oxidation-induced strain, similar to the case of the formation of the Pb centers.

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