[1] Miller S E 1969 Integrated optics: an introduction Bell Syst. Tech. J. 48 2059–69
[2] Kish F et al 2018 System-on-chip photonic integrated circuits IEEE J. Sel. Top. Quantum Electron. 24 1–20
[3] Smit M, Leijtens X, Bente E, Van der Tol J, Ambrosius H, Robbins D, Wale M, Grote N and Schell M 2011 Generic foundry model for InP-based photonics IET Optoelectron. 5 187–94
[4] Smit M et al 2014 An introduction to InP-based generic integration technology Semicond. Sci. Technol. 29 083001
[5] Summers J et al 2014 Monolithic InP-based coherent transmitter photonic integrated circuit with 2.25 Tbit/s capacity Electron. Lett. 50 1150–2
[6] Lal V et al 2017 Extended C-band tunable multi-channel InP-based coherent transmitter PICs J. Lightwave Technol. 35 1320–7
[7] Yao W, Jiao Y and Williams K A 2018 Nanophotonics enables future InP PIC scaling Featured Article in PIC Magazine (Issue 11 October 2018)
[8] Bogaerts W, Baets R, Dumon P, Wiaux V, Beckx S, Taillaert D, Luyssaert B, Van Campenhout J, Bienstman P and Van Thourhout D 2005 Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology J. Lightwave Technol. 23 401–12
[9] Szelag B et al 2019 Hybrid III–V/silicon technology for laser integration on a 200-mm fully CMOS-compatible silicon photonics platform IEEE J. Sel. Top. Quantum Electron. 25 1–10
[10] Zhang J, Haq B, O’Callaghan J, Gocalinska A, Pelucchi E, Trindade A J, Corbett B, Morthier G and Roelkens G 2018 Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser Opt. Express 26 8821–30
[11] Chen S et al 2016 Electrically pumped continuous-wave III–V quantum dot lasers on silicon Nat. Photon. 10 307–11
[12] Arai S, Nishiyama N, Maruyama T and Okumura T 2011 GaInAsP/InP membrane lasers for optical interconnects IEEE J. Sel. Top. Quantum Electron. 17 1381–9
[13] Okamoto T, Nunoya N, Onodera Y, Tamura S and Arai S 2001 Continuous wave operation of optically pumped membrane DFB laser Electron. Lett. 37 1455–7
[14] Kakitsuka T, Hasebe K, Fujii T, Sato T, Takeda K and Matsuo S 2015 InP-based membrane optical devices for large-scale photonic integrated circuits NTT Tech. Rev. 13 1–6
[15] Oe K, Noguchi Y and Caneau C 1994 GaInAsP lateral current injection lasers on semi-insulating substrates IEEE Photonic Technol. Lett. 6 479–81
[16] Aihara T, Hiraki T, Takeda K, Fujii T, Kakitsuka T, Tsuchizawa T and Matsuo S 2019 Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide Opt. Express 27 36438–48
[17] Inoue D, Hiratani T, Atsuji Y, Tomiyasu T, Amemiya T, Nishiyama N and Arai S 2015 Monolithic integration of membrane-based butt-jointed built-in DFB lasers and p-i-n photodiodes bonded on Si substrate IEEE J. Sel. Top. Quantum Electron. 21 1–7
[18] Matsuo S, Takeda K, Sato T, Notomi M, Shinya A, Nozaki K, Taniyama H, Hasebe K and Kakitsuka T 2012 Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser Opt. Express 20 3773–80
[19] Okumura T 2010 Study of GaInAsP/InP Membrane DFB Laser on Silicon on Insulator Substrate (Tokyo: Tokyo Institute of Technology)
[20] Tomiyasu T, Hiratani T, Inoue D, Nakamura N, Amemiya T, Nishiyama N and Arai S 2017 Waveguide loss reduction of lateral-current-injection type GaInAsP/InP membrane Fabry–P´erot laser Japan. J. Appl. Phys. 56 050311
[21] Jr H C C and Buehler E 1977 Evidence for low surface recombination velocity on n-type InP Appl. Phys. Lett. 30 247–9
[22] Sakai S, Umeno M and Amemiya Y 1980 Measurement of diffusion coefficient and surface recombination velocity for P-InGaAsP grown on InP Japan. J. Appl. Phys. 19 109–13
[23] Hiratani T, Inoue D, Tomiyasu T, Fukuda K, Amemiya T, Nishiyama N and Arai S 2017 High-efficiency operation of membrane distributed-reflector lasers on silicon substrate IEEE J. Sel. Top. Quantum Electron. 23 1–8
[24] Tomiyasu T, Hiratani T, Inoue D, Nakamura N, Fukuda K, Uryu T, Amemiya T, Nishiyama N and Arai S 2017 High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si Appl. Phys. Express 10 062702
[25] Tomiyasu T, Inoue D, Hiratani T, Fukuda K, Nakamura N, Uryu T, Amemiya T, Nishiyama N and Arai S 2018 20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit Appl. Phys. Express 11 012704
[26] Takeda K, Sato T, Shinya A, Nozaki K, Kobayashi W, Taniyama H, Notomi M, Hasebe K, Kakitsuka T and Matsuo S 2013 Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers Nat. Photon. 7 569–75
[27] Kuruma K, Ota Y, Kakuda M, Iwamoto S and Arakawa Y 2020 Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots APL Photonics 5 046106
[28] Pogoretskiy V, van Engelen J, van der Tol J, Higuera-Rodriguez A, Smit M and Jiao Y 2017 An integrated SOA-building block for an InP-membrane platform Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS) (New Orleans, LA: Optical Society of America) pp JW4A.1
[29] Jiao Y et al 2020 Indium phosphide membrane nanophotonic integrated circuits on silicon Phys. Status Solidi a 217 1900606
[30] Augustin L M et al 2018 InP-based generic foundry platform for photonic integrated circuits IEEE J. Sel. Top. Quantum Electron. 24 1–10
[31] Soares M F, Baier M, Gaertner T, Grote N, Moehrle M, Beckerwerth T, Runge P and Schell M 2019 InP-based foundry PICs for optical interconnects Appl. Sci. 9 1588
[32] Pogoretskiy V 2019 Nanophotonic Membrane Platform for Integrated Active Devices and Circuits (Eindhoven: Eindhoven University of Technology)
[33] Jiao Y, Heiss D, Shen L, Bhat S, Smit M and van der Tol J 2015 First demonstration of an electrically pumped laser in the inp membrane on silicon platform Advanced Photonics 2015 (Boston, MA: Optical Society of America) pp IM4B.3
[34] Tol J J G M V D, Jiao Y, Shen L, Millan-Mejia A, Pogoretskii V, Engelen J P V and Smit M K 2018 Indium phosphide integrated photonics in membranes IEEE J. Sel. Top. Quantum Electron. 24 6100809
[35] Davenport M L, Skendzic S, Volet N, Hulme J C, Heck M J R and Bowers J E 2016 Heterogeneous silicon/III-V semiconductor optical amplifiers IEEE J. Sel. Top. Quantum Electron. 22 3100111
[36] Roelkens G et al 2015 III-V-on-silicon photonic devices for optical communication and sensing Photonics 2 969
[37] Zhang J et al 2019 III-V-on-Si photonic integrated circuits realized using micro-transfer-printing APL Photonics 4 110803
[38] Shen L, Jiao Y, Rodriguez A H, Mejia A J M, Roelkens G C, Smit M K and Tol J J G M V D 2016 Double-sided processing for membrane-based photonic integration 18th European Conf. on Integrated Optics (ECIO 2016) (Warsaw, Poland)
[39] Tol J J G M V D, Jiao Y, Engelen J P V, Pogoretskiy V, Kashi A A and Williams K 2020 InP membrane on silicon (IMOS) photonics J. Quantum Elect. 56 1–7
[40] Kurishima K, Kobayashi T and Gösele U 1992 Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures Appl. Phys. Lett. 60 2496–8
[41] Huang Y, Ryou J-H and Dupuis R D 2008 Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors J. Cryst. Growth 310 4345–50
[42] Weber J P 1994 Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters IEEE J. Quantum Electron. 30 1801–16
[43] Reier F W, Jahn E, Agrawal N, Harde P and Grote N 1994 Doping characteristics of undoped and Zn-doped in(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy J. Cryst. Growth 135 463–8
[44] Bhat R, Koza M A, Song J I, Schwarz S A, Caneau C and Hong W P 1994 Reduction of zinc diffusion into the collector of InP-based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition Appl. Phys. Lett. 65 338–40
[45] Chellic C, Cui D, Hubbard S M, Eisenbach A, Pavlidis D, Krawczyk S K and Sermage B 1999 Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs Conf. Proc. 11th Int. Conf. on Indium Phosphide and Related Materials (IPRM’99) (Cat. No.99CH36362) pp 127–30
[46] Cui D, Pavlidis D and Eisenbach A 2000 Characterization of carbon induced lattice contraction of highly carbon doped InGaAs Conf. Proc. 2000 Int. Conf. on Indium Phosphide and Related Materials (Cat. No.00CH37107) pp 526–9
[47] Koumetz S, Marcon J, Ketata K, Ketata M and Launay P 1997 Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy J. Phys. D: Appl. Phys. 30 757–62
[48] Daunt C L M, Cleary C S, Manning R J, Thomas K, Young R J, Pelucchi E, Corbett B and Peters F H 2012 Sub 10 ps carrier response times in electroabsorption modulators using quantum well offsetting IEEE J. Quantum Electron. 48 1467–75
[49] Inoue D, Lee J, Doi K, Hiratani T, Atsuji Y, Amemiya T, Nishiyama N and Arai S 2014 Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate Appl. Phys. Express 7 072701
[50] Matsuo S, Fujii T, Hasebe K, Takeda K, Sato T and Kakitsuka T 2014 Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer Opt. Express 22 12139–47
[51] Liu X and Aspnes D E 2009 Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition Appl. Phys. Lett. 94 253112
[52] Inoue D 2017 GaInAsP/InP membrane Integrated Lasers for On-chip Optical Interconnection (Tokyo: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)
[53] Maile B E, Forchel A, Germann R and Grützmacher D 1989 Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires Appl. Phys. Lett. 54 1552–4
[54] Takino Y, Shirao M, Sato N, Sato T, Amemiya T, Nishiyama N and Arai S 2012 Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning IEEE J. Quantum Electron. 48 971–9
[55] Pogoretskiy V, Engelen J P V, Tol J V D and Jiao Y 2018 Adhesive wafer bonding of 2 inch InP to 3 inch silicon wafers for a membrane integrated photonics platform Proc. 23rd Annual Symp. of the IEEE Photonics Society Benelux Chapter (Brussel, Belgium) pp 160–4
[56] Lee J, Maeda Y, Atsumi Y, Takino Y, Nishiyama N and Arai S 2012 Low-loss GaInAsP wire waveguide on Si substrate with benzocyclobutene adhesive wafer bonding for membrane photonic circuits Japan. J. Appl. Phys. 51 042201
[57] Park J-K, Takagi S and Takenaka M 2018 InGaAsP Mach–Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform Opt. Express 26 4842–52
[58] Wang Y, Nagasaka K, Mitarai T, Ohiso Y, Amemiya T and Nishiyama N 2020 High-quality InP/SOI heterogeneous material integration by room temperature surface-activated bonding for hybrid photonic devices Japan. J. Appl. Phys. 59 052004
[59] Hayashi Y, Suzuki J, Inoue S, Hasan S M T, Kuno Y, Itoh K, Amemiya T, Nishiyama N and Arai S 2016 GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2plasma-activated bonding Japan. J. Appl. Phys. 55 082701
[60] Spiegelberg M, Engelen J P V, Vries T D, Williams K A and Tol J J G M V D 2018 BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers Proc. 23rd Annual Symp. of the IEEE Photonics Society Benelux Chapter (Brussel, Belgium) pp 160–4
[61] Sakanas A, Semenova E, Ottaviano L, Mørk J and Yvind K 2019 Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding Microelectron. Eng. 214 93–99
[62] Liang D and Bowers J E 2008 Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate J. Vac. Sci. Technol. B 26 1560–8
[63] Fang W, Takahashi N, Ohiso Y, Amemiya T and Nishiyama N 2020 High-quality, room-temperature, surface-activated bonding of GaInAsP/InP membrane structure on silicon Japan. J. Appl. Phys. 59 060905
[64] Spiegelberg M, Engelen J P V, Williams K A and Tol J J G M V D 2019 Wafer scale technology to integrate photonics on BiCMOS electronics Proc. of the 24th Annual Symp. of the IEEE Photonics Society Benelux Chapter (Amsterdam, The Netherlands)
[65] Inoue K, Plumwongrot D, Nishiyama N, Sakamoto S, Enomoto H, Tamura S, Maruyama T and Arai S 2009 Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60 Japan. J. Appl. Phys. 48 030208
[66] Kang J 2014 Study of Si Grating Couplers toward 3-Dimensional Optical Interconnect (Tokyo: Tokyo Institute of Technology)
[67] Jiao Y, Pello J, Mejia A M, Shen L, Smalbrugge B, Geluk E J, Smit M and van der Tol J 2014 Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices Opt. Lett. 39 1645–8
[68] Jiao Y, de Vries T, Unger R-S, Shen L, Ambrosius H, Radu C, Arens M, Smit M and van der Tol J 2015 Vertical and smooth single-step reactive ion etching process for InP membrane waveguides J. Electrochem. Soc. 162 E90–5
[69] Selvaraja S K et al 2014 Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform OFC 2014 pp 1–3
[70] Bolk J, Ambrosius H, Stabile R, Latkowski S, Leijtens X, Bitincka E, Augustin L, Marsan D, Darracq J and Williams K 2018 Deep UV lithography process in generic InP integration for arrayed waveguide gratings IEEE Photonics Technol. Lett. 30 1222–5
[71] Engelen J V, Reniers S, Bolk J, Williams K, Tol J V D and Jiao Y 2019 Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography Compound Semiconductor Week (CSW 2019) (Nara, Japan) pp MoA3–7
[72] Engelen J V, Bolk J, Zhang X, Williams K, Jiao Y and Tol J V D 2019 Arrayed waveguide grating in InP membrane on silicon patterned by 193-nm deep UV lithography Proc. 24th Annual Symp. of the IEEE Photonics Society Benelux Chapter (Amsterdam, The Netherlands)
[73] Kobayashi S et al 2010 LWR Reduction by Novel Lithographic and Etch Techniques vol 7639 (SPIE)
[74] Shen L et al 2015 Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices Opt. Mater. Express 5 393–8
[75] Shen L, Veldhoven P J V, Jiao Y, Dolores-Calzadilla V, Tol J J G M V D, Roelkens G and Smit M K 2016 Ohmic contacts with ultra-low optical loss on heavily doped n-type InGaAs and InGaAsP for InP-based photonic membranes IEEE Photonics J. 8 1–10
[76] Jin-Kwon P, Mitsuru T and Shinichi T 2016 Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices Japan. J. Appl. Phys. 55 04EH
[77] Liu T, Pagliano F, Veldhoven R V, Pogoretskiy V, Jiao Y and Fiore A 2019 Low-voltage MEMS optical phase modulators and switches on a indium phosphide membrane on silicon Appl. Phys. Lett. 115 251104
[78] Pogoretskiy V, Jiao Y, Smit M and Tol J V D 2017 Continuous wave integrated DBR laser in an InP membrane platform 2017 IEEE Photonics Conf. (IPC) pp 13–14
[79] Reniers S F G, Wang Y, Williams K A, Tol J J G M V D and Jiao Y 2019 Characterization of waveguide photonic crystal reflectors on indium phosphide membranes IEEE J. Quantum Electron. 55 1–7
[80] Pogoretskiy V, Engelen J P V, Tol J J G M V D and Jiao Y 2018 Towards a fully integrated indium-phosphide membrane on silicon photonics platform SPIE/COS Photonics Asia: SPIE pp 7
[81] Coldren L A, Corzine S W and Mashanovitch M L 2012 Diode Lasers and Photonic Integrated Circuits (New York: Wiley)
[82] Pogoretskiy V, Tol J V D, Higuera-Rodriguez A, Smit M and Jiao Y 2017 Integrated photonic crystal DBR laser in an InP membrane platform 39th Progress in Electromagnetic Research Symp. (PIERS 2017) (Singapore)
[83] Pogoretskiy V, Tol J V D, Smit M and Jiao Y 2019 Monolithically integrated widely tunable laser on an InP membrane circuits 24th OptoElectronics and Communications Conf. (OECC 2019) (Fukuoka, Japan) pp WD2
[84] Pogoretskiy V, Tol J V D and Jiao Y 2019 Low noise monolithically integrated membrane DFB laser on silicon Compound Semiconductor Week (CSW 2019), (Nara, Japan) pp MoA3–8
[85] van der Tol J J G M, Jiao Y and Williams K A 2018 Semiconductors and Semimetals (Amsterdam: Elsevier)
[86] Miller D A B 2009 Device requirements for optical interconnects to silicon chips Proc. IEEE 97 1166–85
[87] Hiratani T, Shindo T, Doi K, Atsuji Y, Inoue D, Amemiya T, Nishiyama N and Arai S 2015 Energy cost analysis of membrane distributed-reflector lasers for on-chip optical interconnects IEEE J. Sel. Top. Quantum Electron. 21 299–308
[88] Hill M T et al 2007 Lasing in metallic-coated nanocavities Nat. Photon. 1 589–94
[89] Hill M T 2018 Electrically pumped metallic and plasmonic nanolasers Chin. Phys. B 27 114210
[90] Ding K, Liu Z C, Yin L J, Hill M T, Marell M J H, van Veldhoven P J, Nöetzel R and Ning C Z 2012 Room-temperature continuous wave lasing in deep-subwavelength metallic cavities under electrical injection Phys. Rev. B 85 041301
[91] Dolores-Calzadilla V, Romeira B, Pagliano F, Birindelli S, Higuera-Rodriguez A, van Veldhoven P J, Smit M K, Fiore A and Heiss D 2017 Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon Nat. Commun. 8 14323
[92] Xiao Y, Watanabe M, Wang Y, Tanemura T and Nakano Y 2018 Waveguide coupling of wavelength-scale capsule-shaped metal-clad laser 2018 IEEE Int. Semiconductor Laser Conf. (ISLC) pp 1–2
[93] Zhang B, Okimoto T, Tanemura T and Nakano Y 2014 Proposal and numerical study on capsule-shaped nanometallic semiconductor lasers Japan. J. Appl. Phys. 53 112703
[94] Higuera Rodriguez A, Romeira B, Birindelli S, Black L, Smalbrugge B, Kessels E, Smit M and Fiore A 2016 Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) (Vancouver: Optical Society of America) pp ITu2A
[95] Mäkelä M, Hatanpää T, Ritala M, Leskelä M, Mizohata K, Meinander K and Räisänen J 2016 Potential gold(I) precursors evaluated for atomic layer deposition J. Vac. Sci. Technol. A 35 01B112
[96] Mäkelä M, Hatanpää T, Mizohata K, Meinander K, Niinistö J, Räisänen J, Ritala M and Leskelä M 2017 Studies on thermal atomic layer deposition of silver thin films Chem. Mater. 29 2040–5
[97] Ren´e H J V, Akhil S, Yuqing J, Wilhelmus M M K and Ageeth A B 2016 Area-selective atomic layer deposition of platinum using photosensitive polyimide Nanotechnology 27 405302
[98] Vervuurt R H J, Karasulu B, Thissen N F W, Yuqing J, Weber J-W, Kessels W E M and Bol A A 2018 Pt–graphene contacts fabricated by plasma functionalization and atomic layer deposition Adv. Mater. Interfaces 5 1800268
[99] Gu Z, Inoue D, Amemiya T, Nishiyama N and Arai S 2018 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate Appl. Phys. Express 11 022102
[100] Gu Z, Uryu T, Nakamura N, Inoue D, Amemiya T, Nishiyama N and Arai S 2017 On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate Appl. Opt. 56 7841–8
[101] Nozaki K, Matsuo S, Fujii T, Takeda K, Ono M, Shakoor A, Kuramochi E and Notomi M 2016 Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier Optica 3 483–92
[102] Inoue D, Hiratani T, Fukuda K, Tomiyasu T, Gu Z, Amemiya T, Nishiyama N and Arai S 2017 Integrated optical link on Si substrate using membrane distributed-feedback laser and p-i-n photodiode IEEE J. Sel. Top. Quantum Electron. 23 1–8
[103] Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T and Furuta T 1997 Ultrafast electronics and optoelectronics OSA Trends in Optics and Photonics Series (Optical Society of America) pp UC3
[104] Shen L, Jiao Y, Yao W, Cao Z, Engelen J P V, Tol J J G M V D, Roelkens G and Smit M K 2016 High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform Opt. Express 24 8290–301
[105] Renaud C, Fice M, Ponnampalam L, Natrella M, Graham C and Seeds A 2015 Uni-travelling Carrier Photodetectors as THz Detectors and Emitters vol 9370 (SPIE)
[106] Wolf S et al 2018 Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying Sci. Rep. 8 2598
[107] Heni W et al 2017 Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design Opt. Express 25 2627–53
[108] Kieninger C et al 2018 Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator Optica 5 739–48
[109] Koeber S et al 2015 Femtojoule electro-optic modulation using a silicon–organic hybrid device Light Sci. Appl. 4 e255-e
[110] Sekine N, Takagi S and Takenaka M 2019 Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator Compound Semiconductor Week (CSW 2019) (Nara, Japan) pp TuA3
[111] Millan Mejia A J, Jiao Y, van der Tol J J G M and Smit M K 2016 Fabrication technology of a slot waveguide modulator in InP Membranes on silicon (IMOS) 18th European Conf. on Integrated Optics (ECIO 2016)
[112] Ikku Y, Yokoyama M, Ichikawa O, Hata M, Takenaka M and Takagi S 2012 Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform European Conf. and Exhibition on Optical Communication p Tu.4.E.5
[113] Liu T, Pagliano F, Veldhoven R V, Pogoretskii V, Jiao Y and Fiore A 2019 Low-voltage InP MEMS optical switch on silicon 21th European Conf. on Integrated Optics (ECIO 2019) (Ghent, Belgium) pp F.A2.4
[114] Engelen J P V, Shen L, Roelkens G, Jiao Y, Smit M K and Tol J J G M V D 2018 A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations IEEE J. Sel. Top. Quantum Electron. 24 1–8
[115] Nishi H, Takeda K, Tsuchizawa T, Fujii T, Matsuo S, Yamada K and Yamamoto T 2015 Monolithic integration of InP Wire and SiOx waveguides on Si Platform IEEE Photonics J. 7 1–8
[116] Dave U D, Kuyken B, Leo F, Gorza S-P, Combrie S, De Rossi A, Raineri F and Roelkens G 2015 Nonlinear properties of dispersion engineered InGaP photonic wire waveguides in the telecommunication wavelength range Opt. Express 23 4650–7
[117] Rahim A et al 2017 Expanding the silicon photonics portfolio with silicon nitride photonic integrated circuits J. Lightwave Technol. 35 639–49
[118] Kumar R R, Raevskaia M, Pogoretskii V, Jiao Y and Tsang H K 2019 Entangled photon pair generation from an InP membrane micro-ring resonator Appl. Phys. Lett. 114 021104
[119] Kumar R R, Raevskaia M, Pogoretskii V, Jiao Y and Tsang H K 2019 InP membrane micro-ring resonator for generating heralded single photons J. Opt. 21 115201
[120] Chang L et al 2019 Low loss (Al)GaAs on an insulator waveguide platform Opt. Lett. 44 4075–8
[121] Epping J P, Oldenbeuving R M, Geskus D, Visscher I, Grootjans R, Roeloffzen C G H and Heideman R G 2019 High power, tunable, narrow linewidth dual gain hybrid laser Laser Congress 2019 (ASSL, LAC, LS&C) (Vienna, Optical Society of America) pp ATu1A.4
[122] Takenaka M and Nakano Y 2007 InP photonic wire waveguide using InAlAs oxide cladding layer Opt. Express 15 8422–7
[123] Jiao Y, Liu J, Mejia A M, Shen L and Tol J V D 2016 Ultra-sharp and highly tolerant waveguide bends for InP photonic membrane circuits IEEE Photonics Technol. Lett. 28 1637–40
[124] Emre Kaplan A, Bellanca G, van Engelen J P, Jiao Y, van der Tol J J G M and Bassi P 2019 Experimental characterization of directional couplers in InP photonic membranes on silicon (IMOS) OSA Contin. 2 2844–54
[125] Kleijn E, Melati D, Melloni A, de Vries T, Smit M K and Leijtens X J M 2014 Multimode interference couplers with reduced parasitic reflections IEEE Photonics Technol. Lett. 26 408–10
[126] Millan-Mejia A J, Tol J J G M V D and Smit M K 2017 1 × 2 Multimode interference coupler with ultra-low reflections in membrane photonic integrated circuits 19th European Conf. on Integrated Optics (ECIO 2017)
[127] Kleijn E, Smit M K and Leijtens X J M 2013 Multimode interference reflectors: a new class of components for photonic integrated circuits J. Lightwave Technol. 31 3055–63
[128] Takenaka M, Yokoyama M, Sugiyama M, Nakano Y and Takagi S 2013 InGaAsP grating couplers fabricated using complementary-metal–oxide–semiconductor-compatible III–V-on-insulator on Si Appl. Phys. Express 6 042501
[129] Kashi A A, Tol J V D, Williams K and Jiao Y 2019 High-efficiency deep-etched apodized focusing grating coupler with metal back-reflector on an InP-membrane 24th OptoElectronics and Communications Conf. (OECC 2019) (Fukuoka, Japan) pp 1–3
[130] Higuera-Rodriguez A, Dolores-Calzadilla V, Jiao Y, Geluk E J, Heiss D and Smit M K 2015 Realization of efficient metal grating couplers for membrane-based integrated photonics Opt. Lett. 40 2755–7
[131] Nishi H, Fujii T, Takeda K, Hasebe K, Kakitsuka T, Tsuchizawa T, Yamamoto T, Yamada K and Matsuo S 2016 Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate Opt. Express 24 18346–52
[132] Takenaka M, Yokoyama M, Sugiyama M, Nakano Y and Takagi S 2009 InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer Appl. Phys. Express 2 122201
[133] Wang J, Sheng Z, Li L, Pang A, Wu A, Li W, Wang X, Zou S, Qi M and Gan F 2014 Low-loss and low-crosstalk 8 × 8 silicon nanowire AWG routers fabricated with CMOS technology Opt. Express 22 9395–403
[134] Zhang X, Engelen J V, Reniers S, Cao Z, Jiao Y and Koonen A M J 2019 Reflecting AWG by using photonic crystal reflector on indium-phosphide membrane on silicon platform IEEE Photonic Technol. Lett. 31 1041–4
[135] Pello J, Muneeb M, Keyvaninia S, van der Tol J J G M, Roelkens G and Smit M K 2013 Planar concave grating demultiplexers on an InP-membrane-on-silicon photonic platform IEEE Photonics Technol. Lett. 25 1969–72
[136] Jiao Y, Jiang Y and Tol J J G M V D 2015 Thermo-optic tuning of wavelength (de)multiplexers on InP membrane Proc. 20th Annual Symp. of the IEEE Photonics Benelux Chapter
[137] Tol J J G M V D, Felicetti M and Smit M K 2012 Increasing tolerance in passive integrated optical polarization converters J. Lightwave Technol. 30 2884–9
[138] Pello J, van der Tol J, Keyvaninia S, van Veldhoven R, Ambrosius H, Roelkens G and Smit M 2012 High-efficiency ultrasmall polarization converter in InP membrane Opt. Lett. 37 3711–3
[139] Reniers S, Pogoretskiy V, Williams K, Tol J V D and Jiao Y 2019 Towards the integration of an ultrashort polarization converter on the active-passive InP-membrane-on-silicon platform Proc. 24th Annual Symp. of the IEEE Photonics Society Benelux Chapter (Amsterdam, The Netherlands)
[140] Kashi A A, Tol J J G M V D, Jiao Y and Williams K A 2018 Development of plasmonic slot waveguide on InP membrane Proc. 23rd Annual Symp. of the IEEE Photonics Society Benelux Chapter (Brussel, Belgium)
[141] Eu H 2020 Project WIPE (available at: http://wipe.jeppix.eu)
[142] Meighan A, Wale M J and Williams K A 2017 Low resistance metal interconnection for direct wafer bonding of electronic to photonic ICs Proc. 22nd Annual Symp. of the IEEE Photonics Society Benelux Chapter (Delft, The Netherlands) pp 116–9
[143] Amemiya T, Kanazawa T, Hiratani T, Inoue D, Gu Z, Yamasaki S, Urakami T and Arai S 2017 Organic membrane photonic integrated circuits (OMPICs) Opt. Express 25 18537–52
[144] Cantatore E 2015 Printed Circuits and Their Applications: Which Way Forward? vol 9569 (SPIE)
[145] Pecunia V, Fattori M, Abdinia S, Sirringhaus H and Cantatore E 2018 Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics (Cambridge: Cambridge University Press)
[146] Hossain M, Weimann N, Lisker M, Meliani C, Tillack B, Krozer V and Heinrich W 2015 A 330 GHz hetero-integrated source in InP-on-BiCMOS technology 2015 IEEE MTT-S Int. Microwave Symp. pp 1–4
[147] Yokoyama M, Yasuda T, Takagi H, Yamada H, Fukuhara N, Hata M, Sugiyama M, Nakano Y, Takenaka M and Takagi S 2009 Thin body III–V-semiconductor-on-insulator metal–oxide–semiconductor field-effect transistors on Si fabricated using direct wafer bonding Appl. Phys. Express 2 124501
[148] Takenaka M, Kim Y, Han J, Kang J, Ikku Y, Cheng Y, Park J, Yoshida M, Takashima S and Takagi S 2017 Heterogeneous CMOS photonics based on SiGe/Ge and III–V semiconductors integrated on Si platform IEEE J. Sel. Top. Quantum Electron. 23 64–76
[149] Park J K, Takagi S and Takenaka M 2017 Monolithic integration of InGaAsP MZI modulator and InGaAs driver MOSFET using III-V CMOS photonics 2017 Optical Fiber Communications Conf. and Exhibition (OFC) pp 1–3
[150] Cheng Y, Ikku Y, Takenaka M and Takagi S 2016 Low-dark-current waveguide InGaAs metal–semiconductor–metal photodetector monolithically integrated with InP grating coupler on III–V CMOS photonics platform Japan. J. Appl. Phys. 55 04EH1
[151] Leuthold J et al 2013 Plasmonic communications: light on a wire Opt. Photonics News 24 28–35
[152] Eu H 2020 project ChipAI (available at: http://www.chipai.eu.)
[153] Koonen T 2018 Indoor optical wireless systems: technology, trends, and applications J. Lightwave Technol. 36 1459–67
[154] Koonen T, Oh J, Mekonnen K, Cao Z and Tangdiongga E 2016 Ultra-high capacity indoor optical wireless communication using 2D-steered pencil beams J. Lightwave Technol. 34 4802–9
[155] Yuqing J and Zizheng C 2018 Photonic integration technologies for indoor optical wireless communications Sci. China Inf. Sci. 61 080404
[156] Cao Z, Jiao Y, Shen L, Zhao X, Stabile R, Tol J J G M V D and Koonen T 2017 Ultra-high throughput indoor infrared wireless communication system enabled by a cascaded aperture optical receiver fabricated on InP membrane J. Lightwave Technol. 36 57–67
[157] Jiao Y, Cao Z, Shen L, Tol J V D and Koonen T 2018 Membrane-based receiver/transmitter for reconfigurable optical wireless beam-steering systems IEEE J. Sel. Top. Quantum Electron. 24 6100506
[158] Jiao Y, Kashi A A, Wang Y, Pogoretskiy V and Williams K 2019 IMOS integrated photonics for free-space sensing and communications Asia Communications and Photonics Conf. (ACPC) 2019 (Chengdu: Optical Society of America) p T3D.1
[159] Bozzola A, Carroll L, Gerace D, Cristiani I and Andreani L C 2015 Optimising apodized grating couplers in a pure SOI platform to −0.5 dB coupling efficiency Opt. Express 23 16289–304
[160] Kim S, Westly D A, Roxworthy B J, Li Q, Yulaev A, Srinivasan K and Aksyuk V A 2018 Photonic waveguide to free-space Gaussian beam extreme mode converter Light Sci. Appl. 7 72
[161] Genevet P, Capasso F, Aieta F, Khorasaninejad M and Devlin R 2017 Recent advances in planar optics: from plasmonic to dielectric metasurfaces Optica 4 139–52
[162] Su V-C, Chu C H, Sun G and Tsai D P 2018 Advances in optical metasurfaces: fabrication and applications [Invited] Opt. Express 26 13148–82
[163] Yulaev A, Zhu W, Zhang C, Westly D A, Lezec H J, Agrawal A and Aksyuk V 2019 Metasurface-integrated photonic platform for versatile free-space beam projection with polarization control ACS Photonics 6 2902–9
[164] Velodyne LiDAR (available at: https://velodynelidar.com/)
[165] Kim T et al 2019 A single-chip optical phased array in a wafer-scale silicon photonics/CMOS 3D-integration platform IEEE J. Solid-State Circuits 54 3061–74
[166] Guo W, Binetti P R A, Althouse C, Masanovic M L, Ambrosius H P M M, Johansson L A and Coldren L A 2013 Two-dimensional optical beam steering with InP-based photonic integrated circuits IEEE J. Sel. Top. Quantum Electron. 19 6100212
[167] Hutchison D N, Sun J, Doylend J K, Kumar R, Heck J, Kim W, Phare C T, Feshali A and Rong H 2016 High-resolution aliasing-free optical beam steering Optica 3 887–90
[168] Zhang Y, Ling Y-C, Zhang K, Gentry C, Sadighi D, Whaley G, Colosimo J, Suni P and Ben Yoo S J 2019 Sub-wavelength-pitch silicon-photonic optical phased array for large field-of-regard coherent optical beam steering Opt. Express 27 1929–40
[169] Hulme J C, Doylend J K, Heck M J R, Peters J D, Davenport M L, Bovington J T, Coldren L A and Bowers J E 2015 Fully integrated hybrid silicon two dimensional beam scanner Opt. Express 23 5861–74
[170] Wang Z et al 2017 Novel light source integration approaches for silicon photonics Laser Photonics Rev. 11 1700063
[171] Hyundai P et al 2011 Device and integration technology for silicon photonic transmitters IEEE J. Sel. Top. Quantum Electron. 17 671–88
[172] Wang Y, Engelen J P V, Reniers S, Rijn M B J V, Zhang X, Cao Z, Calzadilla V, Williams K, Smit M K and Jiao Y 2021 InP-based grating antennas for high resolution optical beam steering IEEE J. Sel. Top. Quantum Electron. 27 6100107
[173] Liu T, Pagliano F, van Veldhoven R, Pogoretskiy V, Jiao Y and Fiore A 2020 Integrated nano-optomechanical displacement sensor with ultrawide optical bandwidth Nat. Commun. 11 2407