Fig. 9. Comparison of (a) circuit area and (b) number of JJs of the new LUT
and those of the conventional LUT [12].
the low-temperature stage, the number of cables that connect the
low-temperature and room-temperature stages can be reduced.
Because once the memory cell array in the LUT is reconfigured,
the bias voltage supplied to the CMOS circuit can be turned
off and, therefore, using the CMOS circuit does not increase the
power consumption of the LUT system during its operation. The
SFQ/CMOS hybrid LUT system can be built using conventional
circuit technologies [35]–[37].
V. CONCLUSION
We investigated the compact and scalable SFQ LUT based on
the new memory cell, the datum of which is written by applying
dc control currents. The use of the new memory cell can remove
the complicated wiring in the memory cell array for reconfiguring and resetting the LUT. We designed and experimentally
confirmed the operation of the memory cells and the 4-b LUT
with wide operating margins. We found that the area of the
16-b LUT that employs the new memory cell is smaller than
that of the conventional 16-b LUT by approximately 25%. The
area reduction ratio is estimated to be larger with an increase
in the LUT bit-capacity. These results indicate the effectiveness
of introducing the memory cell proposed in this study into the
large-scale SFQ LUT.
ACKNOWLEDGMENT
The circuits were fabricated in the clean room for analogdigital superconductivity (CRAVITY) of National Institute of
Advanced Industrial Science and Technology (AIST) with the
standard process 2 (STP2) and high-speed standard process
(HSTP).
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Takuya Hosoya received the B.E. degree in electrical and computer engineering
from Yokohama National University, Yokohama, Japan, in 2019. He is currently
working toward the master’s degree in electrical engineering with the Graduate
School of Engineering Science, Yokohama National University.
Yuki Yamanashi (Member, IEEE) received the B.E., M.E., and Ph.D. degrees
in electrical and computer engineering from Yokohama National University,
Yokohama, Japan, in 2003, 2005, and 2007, respectively.
From 2007 to 2012, he was with Interdisciplinary Research Center, Yokohama
National University. Since 2012, he has been with Department of Electrical and
Computer Engineering, Yokohama National University. His research interests
include superconductive circuit design and its applications.
Dr. Yamanashi is a member of the Institute of Electronics, Information and
Communication Engineers of Japan, the Japan Society of Applied Physics, the
Institute of Electrical Engineering of Japan, Cryogenics and Superconductivity
Society of Japan, and the Institute of Electrical and Electronics Engineers.
Nobuyuki Yoshikawa (Senior Member, IEEE) received the B.E., M.E., and
Ph.D. degrees in electrical and computer engineering from Yokohama National
University, Yokohama, Japan, in 1984, 1986, and 1989, respectively.
Since 1989, he has been with the Department of Electrical and Computer
Engineering, Yokohama National University, where he is currently a Professor.
His research interests include superconductive devices and their application in
digital and analog circuits. He is also interested in single-electron-tunneling
devices, quantum computing devices and cryo-CMOS devices.
Dr. Yoshikawa is a member of the Institute of Electronics, Information and
Communication Engineers of Japan, the Japan Society of Applied Physics, the
Institute of Electrical Engineering of Japan, and the Institute of Electrical and
Electronics Engineers.
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