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Light Injection for Chemical Identification of Molecules Adsorbed on Field-Effect Transistor Channel Fabricated with 2D Layered Material

Alam Md Iftekharul 東北大学

2021.09.24

概要

In chapter 1, I have discussed about the reason of choosing transition metal dichalcogenides (TMDs) and outline of each chapter from 2-8.

Two-dimensional (2D) transition metal dichalcogenides (TMDs), a class of materials with a common formula of MX2, where M is a transition metal belongs to IV-VII groups and X is a chalcogen like S, Se or Te 1.

TMDs such as MoS2, WS2, MoSe2, WSe2, MoTe2 are the extensively studied materials for the of electronic and optoelectronic devices2 over graphene due to their sizeable bandgaps. MoS2 is considered as one of the best materials for these purposes due to distinctive physical, optical, and electrical properties 4. Moreover, FET device channel fabricated with MoS2, exhibits high channel mobility (~ 200 cm2V-1S-1), and a high ON/OFF ratio (108) of the drain current 5. In addition, the thin MoS2 can be used for the light emitting devices 6, phototransistors, photodetectors, catalysis, and solar cells 7.

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参考文献

Chapter 1

1. Manish Chhowalla Zhongfan Liu and Hua Zhang. Chem. Soc. Rev., 2015,44, 2584.

2. Sajedeh Manzeli, et al. Nature Reviews Materials volume 2, Article number: 17033 (2017)

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Chapter 3

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2. "Transistors Keep Moore's Law Alive". EE Times. 12 December 2018. Retrieved 18 July 2019.

Chapter 5

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2. Q. Yue, Z. Shao, S. Chang and J. Li, Nanoscale Res. Lett., 2013, 8, 425.

3. D. Sarkar, W. Liu, X. J. Xie, A. C. Anselmo, S. Mitragotri and K. Banerjee, ACS Nano, 2014, 8, 3992-4003.

4. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson and K. S. Novoselov, Nat. Mater., 2007, 6, 652-655.

5. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli and F. Wang, Nano Lett., 2010, 10, 1271- 1275.

6. K. F. Mak, C. Lee, J. Hone, J. Shan and T. F. Heinz, Phys. Rev. Lett., 2010, 105, 136805.

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8. S. H. Amsterdam, T. K. Stanev, Q. Zhou, A. J. Lou, H. Bergeron, P. Darancet, M. C. Hersam, N. P. Stern and T. J. Marks, ACS Nano, 2019, 13, 4183-4190.

Chapter 6

1. Amsterdam, S. H.; Stanev, T. K.; Zhou, Q.; Lou, A. J.; Bergeron, H.; Darancet, P.; Hersam, M. C.; Stern, N. P.; Marks, T. J., Acs Nano 2019, 13 (4), 4183-4190.

2. Suyog Padgaonkar et al., J. Phys. Chem. C 2019, 123, 21, 13337–13343

Chapter 7

1. Jing, Y.; Tan, X.; Zhou, Z.; Shen, P., J. Mater. Chem. A 2014, 2, 16892-16897.

2. Yanmin Huang et al., ACS Appl. Mater. Interfaces 2016, 8, 35, 23362–23370.

Chapter 8

1. Yehia Selim et al., Renewable Energy and Sustainable Development (RESD) Volume 3 Issue 1, Special Issue, March 2017 - ISSN 2356-8569

2. Coehoorn, R.; Haas, C.; Degroot, R. A., Phys Rev B 1987, 35 (12), 6203-6206.

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