Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)

[1] J.-F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G. Christmann, E. Feltin, R. Butt´e,

and N. Grandjean, phys. stat. sol. (b) 242, 2326 (2005).

[2] M. Hiroki, Y. Oda, N. Watanabe, N. Maeda, H. Yokoyama, K. Kumakura, and

H. Yamamoto, J. Crystal Growth 382, 36 (2013).

[3] R. Bouveyron and M. Charles, J. Crystal Growth 464, 105 (2017).

[4] K. Zhou, H. Ren, M. Ikeda, J. Liu, Y. Ma, S. Gao, C. Tang, D. Li, L. Zhang, and

H. Yang, Superlattices and Microstructures 101, 323 (2017).

6/8

Appl. Phys. Express

[5] S. Leone, J. Ligl, C. Manz, L. Kirste, T. Fuchs, H. Menner, M. Prescher, J. Wiegert,

A. Zukauskait´

e, R. Quay, and O. Ambacher, phys. stat. solidi (RRL) 14, 1900535

(2020).

[6] J. Ligl, S. Leone, C. Manz, L. Kirste, P. Doering, T. Fuchs, M. Prescher, and

O. Ambacher, J. Appl. Phys. 127, 195704 (2020).

[7] M. Kume, Y. Ban, K. Harafuji, I. Kidoguchi, S. Kamiyama, A. Tsujimura,

R. Miyanaga, A. Ishibashi,

and Y. Hasegawa, “Semiconductor laser device,”

(1999), patent US6466597B1.

[8] K. Iwata, H. Asahi, K. Asami, and S. ichi Gonda, Jap. J. Appl. Phys. 35 Part 2,

L1634 (1996).

[9] R. Kuroiwa, H. Asahi, K. Asami, S.-J. Kim, K. Iwata, and S. Gonda, Appl. Phys.

Lett. 73, 2630 (1998).

[10] T.-Y. Seong, I.-T. Bae, C.-J. Choi, D. Y. Noh, Y. Zhao, and C. W. Tu, J. Appl.

Phys. 85, 3192 (1999).

[11] R. Soni, P. Dobal, R. Katiyar, H. Asahi, H. Tampo, and S. Gonda, MRS Proceedings 618, 321 (2000).

[12] J. Kikawa, S. Yoshida, and Y. Itoh, J. Crystal Growth 229, 48 (2001).

[13] S. Yoshida, J. Li, and Y. Itoh, phys. stat. sol. (c) 0, 2236 (2003).

[14] L. Li-Wu, C. Ting-Jie, S. Bo, W. Jiang-Nong, and G. Wei-Kun, Chin. Phys. Lett.

22, 2081 (2005).

[15] D. Chen, B. Shen, Z. Bi, K. Zhang, S. Gu, R. Zhang, Y. Shi, Y. Zheng, X. Sun,

S. Wan, and Z. Wang, Appl. Phys. A 80, 141 (2005).

[16] K. Fehse, A. Dadgar, P. Veit, J. Blng, and A. Krost, Appl. Phys. A 82, 733 (2006).

[17] S. Assali, I. Zardo, S. Plissard, D. Kriegner, M. A. Verheijen, G. Bauer, A. Meijerink, A. Belabbes, F. Bechstedt, J. E. M. Haverkort, and E. P. A. M. Bakkers,

Nano Letters 13, 1559 (2013).

[18] P. Kurpas, J. J¨onsson, W. Richter, D. Gutsche, M. Pristovsek, and M. Zorn, J.

Crystal Growth 145, 36 (1994).

[19] X.-L. Wang, A. Wakahara, and A. Sasaki, J. Crystal Growth 129, 289 (1993).

[20] F. Oehler, M. E. Vickers, M. J. Kappers, and R. A. Oliver, J. Appl. Phys. 114,

053520 (2013).

[21] K. Persson, “Materials data on AlP (SG:186) by Materials Project,” (2014).

[22] A. B. Kuzmenko, Rev. Sci. Instr. 76, 083108 (2005).

[23] R. Swanepoel, J. Phys. E: Sci. Instr. 16, 1214 (1983).

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Appl. Phys. Express

[24] Z. Ye, S. Nitta, Y. Honda, M. Pristovsek, and H. Amano, Jpn. J. Appl. Phys. 59,

025511 (2020).

[25] A. Ishibashi, H. Takeishi, M. Mannoh, Y. Yabuuchi, and Y. Ban, J. Electronic

Mat. 25, 799 (1996).

[26] N. Watanabe, T. Kimoto, and J. Suda, J. Appl. Phys. 104, 106101 (2008).

¨ urk, M. Kasap, S. Oz¸

¨ celik,

[27] R. T¨

ulek, A. Ilgaz, S. G¨okden, A. Teke, M. K. Ozt¨

E. Arslan, and E. Ozbay,

J. Appl. Phys. 105, 013707 (2009).

[28] Y. Terada, Y. Shimogaki, Y. Nakano, and M. Sugiyama, J. Crystal Growth 312,

1359 (2010).

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10

10

PtBP

0.09 Pa

0.27 Pa

1.07 Pa

5.33 Pa

10.8 Pa

18.8 Pa

21.5 Pa

(0002)

AlPN/GaN QW

count/s

10

10

AlPyN1-y

<0.3%

~0.7%

~1.1%

~4%

~10%

bad

bad

10

10

1.1 Pa

5.6 Pa

9.3 Pa

-1

10

10 µm

-2

10

16.5

17.0

17.5

18.0

18.5

 (°)

Fig. 1.

ω − 2Θ measurement of a series of 5× AlPN/GaN quantum wells around the (0002) GaN

reflection. Thicker lines indicate nominally compressively strained layers. Inset shows three Nomarski

microscopy images of 20-45 nm thick AlPN films grown on GaN. Partial pressures were TMAl

0.23 Pa, and NH3 20.5 Pa at 1100°C.

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Appl. Phys. Express

GaN (0006)

GaN (0004)

GaN (0003)

Sapphire (000 12)

GaN (0005)

10

sapphire (000 6)

GaN (0001)

10

GaN (0002)

10

counts/s

10

10

10

10

-1

10

10

20

30

40

50

60

70

 (°)

10

(10-15)

GaN (0002)

10

qz

counts/s

10

10

10

qx

10

-1

10

16

17

18

19

20

 (°)

Fig. 2.

Wide area ω − 2Θ measurement of a nearly lattice matched 60 nm AlPN layer on GaN

(top). The dotted lines indicate all allowed cubic AlP reflections. Bottom is a high resolution ω − 2Θ

measurement around (0002) of the same sample with simulation of a 60 nm AlP10.3 N89.7 layer. The

inset is the (10¯

15) reciprocal space map showing a perfectly strained AlPN layer.

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Appl. Phys. Express

Fig. 3.

Refractive index and extinction coefficient averaged from three AlP0.13 N0.87 layers of

180 nm, 315 nm and 655 nm on GaN-sapphire. The points are from vertical incidence reflection

measurements of a 315 nm (open box) and 655 nm (star) AlPN layer. The inset shows the effective

< 1 > data of a 655 nm AlP0.13 N0.87 layer on 22 µm carbon doped GaN on sapphire, to suppress

GaN FP oscillations.

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Appl. Phys. Express

Fig. 4.

TEM-EDS trace from a 140 nm AlPN layer after storage in air for about 2 months (left).

The Ga signal is reduced by

while N, P, and O signals are multiplied by 2.5. The gradient of the

EDS signal amplitudes towards the surface originates from the wedge shape of the TEM slice. The

vertical line marks the interface to GaN according to TEM. Right side shows the normalised

(1-Ga)/Al ratio (open box) and the Al/P ratio (star).

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