Dielectrophoretic assembly of gold nanoparticle arrays evaluated in terms of room-temperature resistance

[1] K.K. Likharev, “Single-electron devices and their applications,”

Proc. IEEE, vol.87, no.4, pp.606–632, 1999. DOI: 10.1109/

5.752518

[2] J.A. Hutchby, G.I. Bourianoff, V.V. Zhirnov, and J.E. Brewer, “Extending the road beyond CMOS,” IEEE Circuits Devices Mag.,

vol.18, no.2, pp.28–41, March, 2002. DOI: 10.1109/101.994856

[3] C. Sch¨onenberger, H. van Houten, and H.C. Donkersloot, “Singleelectron tunnelling observed at room temperature by scanningtunnelling microscopy,” Europhys. Lett., vol.20, no.3, pp.249–254,

Oct. 1992. DOI: 10.1209/0295-5075/20/3/010

[4] T. Sato, H. Ahmed, D. Brown, and B.F.G. Johnson, “Single electron transistor using a molecularly linked gold colloidal particle

chain,” J. Appl. Phys., vol.82, no.2, pp.696–701, July 1997. DOI:

10.1063/1.365600

[5] N. Okabayashi, K. Maeda, T. Muraki, D. Tanaka, M. Sakamoto,

T. Teranishi, and Y. Majima, “Uniform charging energy of singleelectron transistors by using size-controlled Au nanoparticles,”

Appl. Phys. Lett., vol.100, no.3, 033101, Jan. 2012. DOI:

10.1063/1.3676191

[6] H.T.T. Tran, K. Matsumoto, M. Moriya, H. Shimada, Y. Kimura,

A. Hirano-Iwata, and Y. Mizugaki, “Fabrication of high temperature

capacitively- and resistively-coupled single electron transistors using gold nanoparticles,” Proc. 16th Int. Conf. Nanotechnology

(IEEE NANO 2016), Sendai, Japan, TuPo1.20, pp.131–134, Aug.

2016. DOI: 10.1109/NANO.2016.7751353

[7] T.T.T. Huong, K. Matsumoto, M. Moriya, H. Shimada, Y. Kimura,

A. Hirano-Iwata, and Y. Mizugaki, “Gate-tuned negative differential resistance observed at room temperature in an array of gold

nanoparticles,” Appl. Phys. A, vol.123, no.4, 268, April 2017. DOI:

10.1007/s00339-017-0891-8

[8] Y. Mizugaki, K. Matsumoto, M. Moriya, H. Shimada, A. HiranoIwata, and F. Hirose, “One-dimensional array of small tunnel junctions fabricated using 30-nm-diameter gold nanoparticles placed in

a 140-nm-wide resist groove,” Jpn. J. Appl. Phys., vol.57, no.9,

098006, Sept. 2018. DOI: 10.7567/JJAP.57.098006

[9] I. Amlani, A.M. Rawlett, L.A. Nagahara, and R.K. Tsui, “An

approach to transport measurements of electronic molecules,”

Appl. Phys. Lett., vol.80, no.15, pp.2761–2763, April 2002. DOI:

10.1063/1.1469655

[10] L. Zheng, S. Li, J.P. Brody, and P.J. Burke, “Manipulating nanoparticles in solution with electrically contacted nanotubes using dielectrophoresis,” Langmuir, vol.20, no.20, pp.8612–8619, Sept. 2004.

DOI: 10.1021/la049687h

[11] S.O. Lumsdon and D.M. Scott, “Assembly of colloidal particles into

microwires using an alternating electric field,” Langmuir, vol.21,

no.11, pp.4874–4880, May 2005. DOI: 10.1021/la0472697

[12] R.J. Barsotti Jr., M.D. Vahey, R. Wartena, Y.-M. Chiang, J.

Voldman, and F. Stellacci, “Assembly of Metal Nanoparticles into

Nanogaps,” Small, vol.3, no.3, pp.488–499, March 2007. DOI:

10.1002/smll.200600334

[13] S. Kumar, Y.-K. Seo, and G.-H. Kim, “Manipulation and trapping

of semiconducting ZnO nanoparticles into nanogap electrodes by dielectrophoresis technique,” Appl. Phys. Lett., vol.94, no.15, 153104,

April 2009. DOI: 10.1063/1.3118588

[14] D. Cheon, S. Kumar, and G.-H. Kim, “Assembly of gold nanoparticles of different diameters between nanogap electrodes,” Appl. Phys.

Lett., vol.96, no.1, 013101, Jan. 2010. DOI: 10.1063/1.3280859

[15] W. Liu, C. Wang, H. Ding, J. Shao, and Y. Ding, “AC electric field

induced dielectrophoretic assembly behavior of gold nanoparticles

in a wide frequency range,” Appl. Surf. Sci., vol.370, pp.184–192,

May 2016. DOI: 10.1016/j.apsusc.2016.02.118

[16] A. Barik, X. Chen, and S.-H. Oh, “Ultralow-power electronic

trapping of nanoparticles with sub-10 nm gold nanogap electrodes,” Nano Lett., vol.16, no.10, pp.6317–6324, Oct., 2016. DOI:

10.1021/acs.nanolett.6b02690

[17] B.C. Gierhart, D.G. Howitt, S.J. Chen, R.L. Smith, and S.D. Collins,

“Frequency dependence of gold nanoparticle superassembly by dielectrophoresis,” Langmuir, vol.23, no.24, pp.12450–12456, Nov.

2007. DOI: 10.1021/la701472y

[18] S.H. Hong, H.K. Kim, K.H. Cho, S.W. Hwang, J.S. Hwang, and

D. Ahn, “Fabrication of single electron transistors with molecular tunnel barriers using ac dielectrophoresis technique,” J. Vac.

Sci. Technol. B, vol.24, no.1, pp.136–138, Jan. 2006. DOI:

10.1116/1.2150227

[19] S.I. Khondaker, K. Luo, and Z. Yao, “The fabrication of singleelectron transistors using dielectrophoretic trapping of individual

gold nanoparticles,” Nanotechnology, vol.21, no.9, 095204, March

2010. DOI: 10.1088/0957-4484/21/9/095204

[20] S.K. Bose, C.P. Lawrence, Z. Liu, K.S. Makarenko, R.M.J. van

Damme, H.J. Broersma, and W.G. van der Wiel, “Evolution of

a designless nanoparticle network into reconfigurable Boolean

logic,” Nat. Nanotech., vol.10, pp.1048–1052, Dec. 2015. DOI:

10.1038/NNANO.2015.207

[21] M. Moribayashi, T. Yagai, M. Moriya, H. Shimada, A. HiranoIwata, F. Hirose, and Y. Mizugaki, “Single-electron charging effects

observed in arrays of gold nanoparticles formed by dielectrophoresis between SAM-coated electrodes,” AIP Conf. Proc., vol.2067,

020019, Jan. 2019. DOI: 10.1063/1.5089452

[22] H. Ding, W. Liu, J. Shao, Y. Ding, L. Zhang, and J. Niu, “Influence of induced-charge electrokinetic phenomena on the dielectrophoretic assembly of gold nanoparticles in a conductiveisland-based microelectrode system,” Langmuir, vol.29, no.39,

pp.12093–12103, Oct. 2013. DOI: 10.1021/la402060g

[23] T. Koshi and E. Iwase, “Self-healing metal wire using electric field

trapping of metal nanoparticles,” Jpn. J. Appl. Phys., vol.54, no.6S1,

06FP03, June 2015. DOI: 10.7567/JJAP.54.06FP03

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